相关论文: Boron-doped diamond

We substantiate by calculations that the recently discovered superconductivity below 4 K in 3% boron-doped diamond is caused by electron-phonon coupling of the same type as in MgB$_2$, albeit in 3 dimensions. Holes at the top of the…

Superconductivity in an uncompensated boron doped diamond, a very recent observation, is strikingly close to an earlier observation of Anderson-Mott insulator to metal transition, prompting us to suggest an electron correlation driven…

A unique property of a dynamically generated quantum spin Hall state are Goldstone modes that correspond to the long-wavelength fluctuations of the spin-orbit coupling order parameter whose topological Skyrmion excitations carry charge…

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV…

We report evidence of a non-adiabatic Kohn anomaly in boron-doped diamond, using a joint theoretical and experimental analysis of the phonon dispersion relations. We demonstrate that standard calculations of phonons using density functional…

We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or non-magnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of…

Doping effect of diamond nanoparticles on the superconducting properties of MgB2 bulk material has been studied. It is found that the superconducting transition temperature Tc of MgB2 is suppressed by the diamond-doping, however, the…

Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed…

Modulation of probe signal in pump-probe measurements of coherent phonons in dielectrics, with and without spectral resolution, are investigated theoretically taking diamond as an example. Analytical investigation as well as…

We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per…

Compressibility of boron subarsenide B12As2 has been studied by synchrotron X-ray diffraction up to 47 GPa at room temperature in a diamond anvil cell using Ne pressure transmitting medium. A fit of experimental p-V data by Vinet equation…

We predict by first-principles calculations that the electron-doped phosphorene is a potential BCS-like superconductor. The stretching modes at the Brillouin-zone center are remarkably softened by the electron-doping, which results in the…

The crystal structure of boron doped superconducting MgC_{1-x}{11}^B_{x}Ni_{3}, studied by powder neutron diffraction, is reported. The solubility limit of boron is determined to be approximately x=0.16. The unit cell expands from a =…

The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites,…

We study mechanisms of control of charge state and concentration of different point defects in doped insulating crystals. The approach is based on the density functional theory calculations. We apply it to the problem of obtaining of…

We measure the normal-state in-plane resistivity of La-doped Bi-2201 single crystals at low temperatures by suppressing superconductivity with 60-T pulsed magnetic fields. With decreasing hole doping, we observe a crossover from a metallic…

We report density functional calculations based on local density approximation (LDA) of the properties of doped barium bismuthates. Using linear-response approach developed in the framework of the linear muffin-tin-orbital method the phonon…

Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high…

BaMn$_{2}$As$_{2}$ is an antiferromagnetic insulator where a metal-insulator transition occurs with hole doping via the substitution of Ba with K. The metal-insulator transition causes only a small suppression of the N\'eel temperature…

Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change.…