相关论文: Boron-doped diamond

We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hund's exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean…

We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry…

Superconducting transition temperature is calculated for differently doped bilayer cuprates. Superexchange is assumed to be the dominating mechanism of high-temperature superconductivity, but the contribution from the phonon potential is…

Diamond has always been adored as a jewel. Even more fascinating is its outstanding physical properties; it is the hardest material known in the world with the highest thermal conductivity. Meanwhile, when we turn to its electrical…

The temperature and magnetic-field (H) dependences of thermal conductivity (\kappa) of Bi_2Sr_2CaCu_2O_{8+\delta} (Bi2212) are systematically measured for a broad doping range by using both pure Bi2212 single crystals with tuned oxygen…

Diamond is one of the most studied materials because of its unique combination of remarkable electrical, mechanical, thermal and optical properties. Using a fully self-consistent ab initio theory of coupled electron-phonon transport, we…

A novel diamond anvil cell suitable for electrical transport measurements under high pressure has been developed. A boron-doped metallic diamond film was deposited as an electrode onto a nano-polycrystalline diamond anvil using a microwave…

We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…

Tuning the spin-orbit coupling strength via foreign element doping and/or modifying bonding strength via strain engineering are the major routes to convert normal insulators to topological insulators. We here propose an alternative strategy…

Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…

The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide…

We derive the disorder vs. doping phase diagram of the doped Hubbard model via Dynamical Mean Field Theory combined with Typical Medium Theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven)…

Insulator to metal (IMT) transition (T$_t$ $\sim$ 341 K) in the VO2 accompanies transition from an infrared (IR) transparent to IR opaque phase. Tailoring of the IMT and associated IR switching behavior can offer potential thermochromic…

Two recent experiments from Cornell and Columbia have reported insulator-to-metal transitions in two-dimensional (2D) moir\'e transition metal dichalcogenides (mTMD) induced by doping around half-filling, where the system is a Mott…

The effect of doping on the parameters of an electron-hole liquid (EHL) in heterostructures based on transition metal dichalcogenides is studied. The phase diagram of the EHL is constructed. It is shown that for the formation of a…

It is inferred from bulk-sensitive muon Knight shift measurement for a Bi$_{1.76}$Pb$_{0.35}$Sr$_{1.89}$CuO$_{6+\delta}$ single-layer cuprate that metal-insulator (MI) transition (in the low temperature limit, $T\rightarrow0$) occurs at the…

Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $\delta$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to…

We report the Sr substitution effect in an antiferromagnetic insulator LaMnAsO. The Sr doping limit is $x\sim$ 0.10 under the synthesis conditions, as revealed by x-ray diffractions indicate. Upon Sr doping, the room-temperature resistivity…

The spectral weight evolution of the low-dimensional Mott insulator TiOCl upon alkali-metal dosing has been studied by photoelectron spectroscopy. We observe a spectral weight transfer between the lower Hubbard band and an additional peak…

We calculate the "head" element or the (0,0)-element of the wave-vector and frequency-dependent dielectric matrix of bulk crystals via first-principles, all-electron Kohn-Sham states in the integral of the irreducible polarizability in the…