相关论文: Proximity effect and interface transparency in Al/…

The theory of superconductivity in thin SN sandwiches (bilayers) in the diffusive limit is developed within the standard Usadel equation method, with particular emphasis on the case of very thin superconductive layers, d_S << d_N. The…

We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…

We theoretically consider the proximity effect in semiconductor-superconductor hybrid nanostructures, which are being extensively studied in the context of the ongoing search for non-Abelian Majorana fermions in solid state systems.…

At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and can lead to supercurrent flow in SNS junctions [3]. Recent…

Semiconductor-based Josephson junctions provide a platform for studying proximity effect due to the possibility of tuning junction properties by gate voltage and large-scale fabrication of complex Josephson circuits. Recently Josephson…

The superconducting proximity effect is probed experimentally in Josephson junctions fabricated with InAs nanowires contacted by Nb leads. Contact transparencies $t \sim 0.7$ are observed. The electronic phase coherence length at low…

Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with…

Proximity effect is a very powerful approach and has been widely applied to induce electron correlations such as: superconductivity, magnetism and spin-orbit effects at the interface of heterostructure quantum materials. However, proximity…

The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in…

We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall…

We report conductance and supercurrent of InAs nanowires coupled to Al-superconducting electrodes with short channel lengths and good Ohmic contacts. The nanowires are suspended 15\,nm above a local gate electrode. The charge density in the…

Interest in hybrid electronic devices for quantum science is driving the research into superconductor-semiconductor materials combinations. Here we study InAs nanowires coated with shells of $\beta$-Sn. The wires grow via the…

We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment [S. Vaitiekenas \emph{et al.}, Nat. Phys. (2020)], combining both spectroscopic results and microscopic device simulations. In particular,…

We investigate the mesoscopic disorder induced rms conductance variance $\delta G$ in a few layer graphene nanoribbon (FGNR) contacted by two superconducting (S) Ti/Al contacts. By sweeping the back-gate voltage, we observe pronounced…

We report transport measurements down to T=60mK of SININ and SNIN structures in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and Al/Cu/AlOx/Cu (SNIN) vertical junctions. For the first time, a zero bias anomaly was observed…

We investigate the correlations of mutual positions of charge density waves nodes in side-by-side placed InAs nanowires in presence of a conductive atomic force microscope tip served as a mobile gate at helium temperatures. Scanning gate…

Phase- and voltage bias-sensitive quasiparticle transport at a double $NIS_1IS_2$ interface is considered. The barriers $I$ range from tunnel to transparent, and the intermediate region $S_1$ has a width comparable to the superconducting…

We report an investigation of the structural and electronic properties of hybrid superconductor/ferromagnet (S/F) bilayers of composition Nb/Cu$_{60}$Ni$_{40}$ prepared by magnetron sputtering. X-ray and neutron reflectometry show that both…

The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain…

Following significant progress in the visualization and characterization of hybrid superconducting-semiconducting systems, greatly propelled by reports of Majorana zero modes in nanowire devices, considerable attention has been devoted to…