中文
相关论文

相关论文: Locality of interactions for planar memristive cir…

200 篇论文

Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…

This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…

介观与纳米尺度物理 · 物理学 2024-01-30 Sahitya Yarragolla , Torben Hemke , Jan Trieschmann , Thomas Mussenbrock

The memristor can be used as non volatile memory (NVM) and for emulating neuron behavior. It has the ability to switch between low resistance $R_{on}$ and high resistance values $R_{off}$, and exhibit the synaptic dynamic behaviour such as…

新兴技术 · 计算机科学 2018-09-28 Aidana Irmanova , Grant A. Ellis , Alex Pappachen James

A memristor is a two-terminal nanodevice that its properties attract a wide community of researchers from various domains such as physics, chemistry, electronics, computer and neuroscience.The simple structure for manufacturing, small…

新兴技术 · 计算机科学 2017-03-02 Mahyar Shahsavari , Pierre Boulet

Future development of the modern nanoelectronics and its flagships internet of things and artificial intelligence as well as many related applications is largely associated with memristive elements. This technology offers a broad spectrum…

Memristor crossbar architecture is one of the most popular circuit configurations due to its wide range of practical applications. The crossbar architecture can emulate the weighted summation operation, called multiply and accumulate…

新兴技术 · 计算机科学 2022-04-21 Alex James , Leon Chua

The potential of memristive devices is often seeing in implementing neuromorphic architectures for achieving brain-like computation. However, the designing procedures do not allow for extended manipulation of the material, unlike CMOS…

新兴技术 · 计算机科学 2016-04-25 Shari Lim Wei , Eleni Vasilaki , Ali Khiat , Iulia Salaoru , Radu Berdan , Themistoklis Prodromakis

Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous…

In the quest for alternatives to traditional CMOS, it is being suggested that digital computing efficiency and power can be improved by matching the precision to the application. Many applications do not need the high precision that is…

机器学习 · 计算机科学 2014-10-17 Juan Pablo Carbajal , Joni Dambre , Michiel Hermans , Benjamin Schrauwen

We analyze the new equation of motion for the damped oscillator. It differs from the standard one by a damping term which is nonlocal in time and hence it gives rise to a system with memory. Both classical and quantum analysis is performed.…

量子物理 · 物理学 2011-11-10 Dariusz Chruscinski , Jacek Jurkowski

We suggest and experimentally demonstrate a chaotic memory resistor (memristor). The core of our approach is to use a resistive system whose equations of motion for its internal state variables are similar to those describing a particle in…

介观与纳米尺度物理 · 物理学 2011-09-29 T. Driscoll , Y. V. Pershin , D. N. Basov , M. Di Ventra

In 1976, Leon Chua showed that a thermistor can be modeled as a memristive device. Starting from this statement we designed a circuit that has four circuit elements: a linear passive inductor, a linear passive capacitor, a nonlinear…

Transport equations with a nonlocal velocity field have been introduced as a continuum model for interacting particle systems arising in physics, chemistry and biology. Fractional time derivatives, given by convolution integrals of the…

偏微分方程分析 · 数学 2019-04-16 Fabio Camilli , Raul De Maio

Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…

介观与纳米尺度物理 · 物理学 2015-04-08 V. K. Sangwan , D. Jariwala , I. S. Kim , K. -S. Chen , T. J. Marks , L. J. Lauhon , M. C. Hersam

We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of many-electron clusters leading to formation of polarons close to the electron hopping sites. An abrupt change in the gate voltage and…

无序系统与神经网络 · 物理学 2009-11-13 V. I. Kozub , Y. M. Galperin , V. Vinokur , A. L. Burin

When canonical Hamiltonians of local quantum field theories are transformed using a renormalization group procedure for effective particles, the resulting interaction terms are non-local. The range of their non-locality depends on the…

高能物理 - 理论 · 物理学 2014-11-21 Stanislaw D. Glazek

A circuit-field problem is considered. A resistor conducting a constant current is argued to be associated with electromagnetic energy accumulated in the surrounded space, though contrary to the case of an inductor or a capacitor, this…

综合物理 · 物理学 2010-06-23 Emanuel Gluskin

Quantum many-body systems with kinetic constraints exhibit intriguing relaxation dynamics. Recent experimental progress in the field of cold atomic gases offers a handle for probing collective behavior of such systems, in particular for…

量子气体 · 物理学 2019-06-12 Maike Ostmann , Matteo Marcuzzi , Juan P. Garrahan , Igor Lesanovsky

Memristors have emerged as key candidates for beyond-von-Neumann neuromorphic or in-memory computing owing to the feasibility of their ultrahigh-density three-dimensional integration and their ultralow energy consumption. A memristor is…

材料科学 · 物理学 2021-08-06 Lingxiang Hu , Jing Yang , Jingrui Wang , Peihong Cheng , Leon O. Chua , Fei Zhuge

Non-Markovian local in time master equations give a relatively simple way to describe the dynamics of open quantum systems with memory effects. Despite their simple form, there are still many misunderstandings related to the physical…

量子物理 · 物理学 2015-06-05 E. -M. Laine , K. Luoma , J. Piilo