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相关论文: Evaluating arbitrary strain configurations and dop…

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This review presents the state of the art in strain and ripple-induced effects on the electronic and optical properties of graphene. It starts by providing the crystallographic description of mechanical deformations, as well as the…

介观与纳米尺度物理 · 物理学 2017-08-22 Gerardo G. Naumis , Salvador Barraza-Lopez , Maurice Oliva-Leyva , Humberto Terrones

The Raman shift, broadening, and relative Raman intensities of bilayer graphene are computed as functions of the electron concentration. We include dynamic effects for the phonon frequencies and we consider the gap induced in the band…

材料科学 · 物理学 2009-09-11 Paola Gava , Michele Lazzeri , A. Marco Saitta , Francesco Mauri

In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is…

介观与纳米尺度物理 · 物理学 2012-06-07 D. L. Mafra , P. Gava , L. M. Malard , R. S. Borges , G. G. Silva , J. A. Leon , F. Plentz , F. Mauri , M. A. Pimenta

Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but…

介观与纳米尺度物理 · 物理学 2015-05-13 F. Molitor , D. Graf , C. Stampfer , T. Ihn , K. Ensslin

We theoretically study the transmittance for normal incidence of linearly polarized light between two media separated by a strained graphene monolayer. We analytically characterize the degree of dichroism and the transparency of graphene as…

介观与纳米尺度物理 · 物理学 2017-01-31 M. Oliva-Leyva , Gerardo G. Naumis

Graphene is an atomically thin metallic membrane capable of sustaining reversible strain and offers a tempting prospect of controlling its optoelectronic properties via strain. Graphenes exceptional mechanical flexibility and tensile…

介观与纳米尺度物理 · 物理学 2022-06-06 Paul Froeter , Parsian Moseni , Apratim Khandelwal , Xiuling Li

An experimental study of Raman scattering in N-layer graphene as a function of the top layer doping is reported. At high doping level, achieved by a CHF_3 plasma treatment, we observe a splitting of the $G$ band in the spectra of bilayer…

介观与纳米尺度物理 · 物理学 2010-03-23 M. Bruna , S. Borini

We report results from two-dimensional Raman spectroscopy studies of large-area epitaxial graphene grown on SiC. Our work reveals unexpectedly large variation in Raman peak position across the sample resulting from inhomogeneity in the…

材料科学 · 物理学 2015-05-13 J. A. Robinson , C. P. Puls , N. E. Staley , J. Stitt , M. A. Fanton , K. V. Emtsev , T. Seyller , Y. Liu

Raman spectroscopy is the prime non-destructive characterization tool for graphene and related layered materials. The shear (C) and layer breathing modes (LBMs) are due to relative motions of the planes, either perpendicular or parallel to…

Graphene has extraordinary mechanical and electronic properties, making it a promising material for membrane based nanoelectromechanical systems (NEMS). Here, chemical-vapor-deposited graphene is transferred onto target substrates to…

Spatially nonuniform strain is important for engineering the pseudomagnetic field and band structure of graphene. Despite the wide interest in strain engineering, there is still a lack of control on device-compatible strain patterns due to…

Thin membranes, such as monolayer graphene of monoatomic thickness, are bound to exhibit lateral buckling under uniaxial tensile loading that impairs its mechanical behaviour. In this work, we have developed an experimental device to…

Graphene oxide can be used as a precursor to graphene but the quality of graphene flakes is highly heterogeneous. Scanning-Raman-Microscopy (SRM) is used to characterize films of graphene derived from flakes of graphene oxide with an almost…

We study the 2D Raman band of in-plane uniaxially strained graphene within a non-orthogonal tight-binding model. At non-zero strain, the obtained 2D band splits into two subbands at strain angles $0^{\circ}$ and $30^{\circ}$ or into three…

介观与纳米尺度物理 · 物理学 2013-06-11 Valentin N. Popov , Philippe Lambin

We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7eV, as monitored by \textit{in-situ} Hall-effect measurements. For a…

材料科学 · 物理学 2014-10-14 M. Bruna , A. K. Ott , M. Ijas , D. Yoon , U. Sassi , A. C. Ferrari

Graphene is the extreme material for molecular sensory and hydrogen storage applications because of its two-dimensional geometry and unique structure-property relationship. In this Letter, hydrogenation of graphene is discussed in the…

材料科学 · 物理学 2010-02-10 Zhiping Xu , Kun Xue

Raman Spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene…

介观与纳米尺度物理 · 物理学 2012-07-10 Axel Eckmann , Alexandre Felten , Artem Mishchenko , Liam Britnell , Ralph Krupke , Kostya S. Novoselov , Cinzia Casiraghi

We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as…

材料科学 · 物理学 2015-05-27 Tianhua Yu , Chen-Wei Liang , Changdong Kim , Bin Yu

The Raman scattering spectra (RS) of two series of monolayer graphene samples irradiated with various doses of C$^{+}$ and Xe$^{+}$ ions were measured after annealing in high vacuum, and in forming gas (95\%Ar+5\%H$_{2}$). It was found that…

介观与纳米尺度物理 · 物理学 2017-09-28 E. Zion , A. Butenko , Yu. Kaganovskii , V. Richter , L. Wolfson , A. Sharoni , E. Kogan , M. Kaveh , I. Shlimak

Van der Waals single-layer materials are characterized by an inherent extremely low bending rigidity and therefore are prone to nanoscale structural modifications due to substrate interactions. Such interactions can induce excess charge…