相关论文: Drift-diffusion current in organic diodes
An atomistic study of the order-effect occurring in Li$_{x}$CoO$_{2}$ at $x=0.5$ is presented and an explanation for the computationally and experimentally observed dip in the Li diffusivity is proposed. Configurations where a single…
Acquiring the channel state information from limited and noisy observations at pilot positions is critical for wireless multiple-input multiple-output (MIMO)-orthogonal frequency division multiplexing (OFDM) systems. In this paper, we view…
In this paper, we demonstrate the principle of operation of a metal-insulator-semiconductor (MIS) capacitor based on undoped organic semiconductor. In spite of low charge concentration within the semiconductor, this device exhibits a…
We introduce a simple and efficient model to describe the potential energy surface of lithium diffusing in a solid-state ionic conductor. First, we assume that the Li atoms are fully ionized and we neglect the weak dependence of the…
Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical…
We present and discuss a mathematical model for the operation of bilayer organic photovoltaic devices. Our model couples drift-diffusion-recombination equations for the charge carriers (specifically, electrons and holes) with a…
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated…
A microscopic many-body transport approach for electronic properties of spatially inhomogeneous systems is developed at the fully quantum-mechanical level by means of plane wavelets second quantization representation. It is obtained that…
The diffuse-interface model (DIM) is a tool for studying interfacial dynamics. In particular, it is used for modeling contact lines, i.e., curves where a liquid, gas, and solid are in simultaneous contact. As well as all other models of…
In order to develop a method to extract the parameters of the two inherent Schottky contacts from a single current-voltage (I-V) characteristic curve, the I-V characteristics of metal-semiconductor-metal (MSM) diodes with asymmetric…
We theoretically investigate bulk photovoltaic effects, with a specific focus on shift-current and injection-current. Initially, we perform a numerical analysis of the direct current (dc) induced by a laser pulse with a one-dimensional…
We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations…
One-dimensional Mott insulators can be described using the sine-Gordon model, an integrable quantum field theory that provides the low-energy effective description of several one-dimensional gapped condensed matter systems, including recent…
In this article we develop an algorithm for the efficient simulation of electrolytes in the presence of physical boundaries. In previous work the Discrete Ion Stochastic Continuum Overdamped Solvent (DISCOS) algorithm was derived for triply…
A new Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET) is proposed and verified by two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep diffused p+-regions as the gate, the proposed device uses…
Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here we propose a corresponding device in spintronics: the spin-current diode, in…
Using nonequilibrium dynamical mean-field theory, we compute the time evolution of the current in a Mott insulator after a strong electric field is turned on. We observe the formation of a quasistationary state in which the current is…
This paper presents a one-dimensional transient drift--diffusion simulator for advanced solar cells, integrating a structure-preserving finite-volume spatial discretization with Scharfetter--Gummel--type fluxes and a high-order, L-stable…
In diffusion processes of solid materials, such as in the classical thermal shock problem and the recent lithium ion battery, the maximum diffusion induced stress (DIS) is a very important quantity. However a widely accepted, accurate and…
The mathematical modeling and numerical simulation of semiconductor-electrolyte systems play important roles in the design of high-performance semiconductor-liquid junction solar cells. In this work, we propose a macroscopic mathematical…