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相关论文: Drift-diffusion current in organic diodes

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The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductance mismatch is found to enhance the current induced spin-imbalance in the semiconductor.…

介观与纳米尺度物理 · 物理学 2009-11-11 Gerrit E. W. Bauer , Yaroslav Tserkovnyak , Arne Brataas , Jun Ren , Ke Xia , Maciej Zwierzycki , Paul J. Kelly

A system of drift-diffusion equations with electric field under Dirichlet boundary conditions is analyzed. The system of strongly coupled parabolic equations for particle density and spin density vector describes the spin-polarized…

偏微分方程分析 · 数学 2014-02-26 Nicola Zamponi

A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…

介观与纳米尺度物理 · 物理学 2007-05-23 J. P. McGuire , C. Ciuti , L. J. Sham

This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam…

A novel transmission scheme is introduced for efficient data transmission by conveying additional information bits through jointly changing the index and number of active subcarriers within each orthogonal frequency division multiplexing…

信号处理 · 电气工程与系统科学 2020-04-03 Ahmad M. Jaradat , Jehad M. Hamamreh , Huseyin Arslan

Electro-thermal transport phenomena in semiconductors are described by the non-isothermal drift-diffusion system. The equations take a remarkably simple form when assuming the Kelvin formula for the thermopower. We present a novel,…

计算物理 · 物理学 2020-08-21 Markus Kantner , Thomas Koprucki

We regard drift-diffusion equations for semiconductor devices in Lebesgue spaces. To that end we reformulate the (generalized) van Roosbroeck system as an evolution equation for the potentials to the driving forces of the currents of…

偏微分方程分析 · 数学 2007-05-23 Hans-Christoph Kaiser , Hagen Neidhardt , Joachim Rehberg

The correspondence between the steady state theory of current transfer and scattering theory in a system of coupled tight-binding models of 1-dimensional wires is explored. For weak interwire coupling both calculations give nearly identical…

介观与纳米尺度物理 · 物理学 2015-05-18 Vered Ben-Moshe , Dhurba Rai , Spiros S. Skourtis , Abraham Nitzan

The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott…

We study numerically how conservation laws affect the optical conductivity sigma(w) of a slightly doped one-dimensional Mott insulator. We investigate a regime where the average distance between charge excitations is large compared to their…

强关联电子 · 物理学 2009-11-07 M. Garst , A. Rosch

In this paper, a thermal-dynamical consistent model for mass transfer across permeable moving interfaces is proposed by using the energy variation method. We consider a restricted diffusion problem where the flux across the interface…

数值分析 · 数学 2022-06-15 Yuzhe Qin , Huaxiong Huang , Yi Zhu , Chun Liu , Shixin Xu

It is shown that a momentum-boost technique applied to the extended Kohn-Sham scheme enables the computational determination of the Mott insulating transition. Self-consistent solutions are given for correlated electron systems by the…

强关联电子 · 物理学 2009-11-13 K. Kusakabe

Rapid progress in organic electronics demands new highly efficient organic semiconducting materials. Nevertheless, only few materials have been created so far that show reliable band-like transport with high charge mobilities, which…

The zero curvature representation of Zakharov and Shabat has been generalized recently to higher dimensions and has been used to construct non-linear field theories which either are integrable or contain integrable submodels. The Skyrme…

高能物理 - 理论 · 物理学 2008-11-26 C. Adam , J. Sanchez-Guillen , A. Wereszczynski

In this paper the Boltzmann equation describing the carrier transport in a semiconductor is considered. A modified Chapman-Enskog method is used, in order to find approximate solutions in the weakly non-homogeneous case. These solutions…

统计力学 · 物理学 2007-05-23 S. F. Liotta , A. Majorana

This paper presents an improved version of the previously proposed self-consistent drift-diffusion-reaction model correcting for non-physical behavior at longer time scales. To this end a novel boundary condition is employed that takes into…

材料科学 · 物理学 2020-06-19 Behrouz Raftari , Neil Budko , Kees Vuik

The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…

介观与纳米尺度物理 · 物理学 2019-02-15 Wushi Dong , Peter B. Littlewood

We demonstrate that a completely integrable classical mechanical model, namely the lattice Landau-Lifshitz classical spin chain, supports diffusive spin transport with a finite diffusion constant in the easy-axis regime, while in the…

统计力学 · 物理学 2013-08-14 Tomaz Prosen , Bojan Zunkovic

The Debye-Falkenhagen differential equation is commonly used as a mean-field macroscopic model for describing electrochemical ionic drift and diffusion in dilute binary electrolytes when subjected to a suddenly applied potential smaller…

A diffusion interface two-phase magnetohydrodynamic model has been used for matched densities in our previous work [1,2], which may limit the applications of the model. In this work, we derive a thermodynamically consistent diffuse…

数值分析 · 数学 2024-03-13 Ke Zhang
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