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相关论文: Drift-diffusion current in organic diodes

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Organic semiconductors are indispensable for today's display technologies in form of organic light emitting diodes (OLEDs) and further optoelectronic applications. However, organic materials do not reach the same charge carrier mobility as…

软凝聚态物质 · 物理学 2023-10-12 Patrick Reiser , Manuel Konrad , Artem Fediai , Salvador Léon , Wolfgang Wenzel , Pascal Friederich

State-of-the-art industrial semiconductor device modeling is based on highly efficient Drift-Diffusion (DD) models that include some quantum corrections for nanodevices. In contrast, latest academic quantum transport models are based on the…

Strongly correlated physics arises from electron-electron scattering within partially filled orbitals. Organic molecules in open-shell configurations are therefore good candidates to exhibit many-body effects. We focus on electron transport…

强关联电子 · 物理学 2025-11-14 G. Gandus , A. Jayaraj , D. Passerone , R. Stadler , M. Luisier , A. Valli

Using orbital angular momentum (OAM) currents in nanoelectronics, for example, for magnetization manipulation via spin-orbit torque (SOT), represents a growing field known as "spin-orbitronics". Here, using the density functional theory…

材料科学 · 物理学 2025-02-14 Poonam Kumari , Cyrille Barreteau , Alexander Smogunov

We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs…

材料科学 · 物理学 2009-11-07 Aubrey T. Hanbicki , B. T. Jonker , G. Itskos , G. Kioseoglou , A. Petrou

Contact resistance is a severe performance bottleneck for electronic devices based on two-dimensional layered (2D) semiconductors, whose contacts are Schottky rather than Ohmic. Although there is general consensus that the injection…

介观与纳米尺度物理 · 物理学 2017-11-08 Roberto Grassi , Yanqing Wu , Steven J. Koester , Tony Low

By considering the changes in the interface charge-carrier densities of a single-carrier device as a function of injection-barrier heights and comparing these to the equilibrium, background charge-carrier density of a device with Ohmic…

介观与纳米尺度物理 · 物理学 2022-10-26 Jason A. Röhr

In this paper, we consider a drift-diffusion system describing the corrosion of an iron based alloy in a nuclear waste repository. In comparison with the classical drift-diffusion system arising in the modeling of semiconductor devices, the…

偏微分方程分析 · 数学 2012-12-14 Ingrid Lacroix-Violet , Claire Chainais-Hillairet

We study low-dimensional quantum systems with analytical and computational methods. Firstly, the one-dimensional extended $t$-$V$ model of fermions with interactions of a finite range is investigated. The model exhibits a phase transition…

强关联电子 · 物理学 2018-10-18 Marcin Szyniszewski

We propose a theory of optically-induced currents in dielectrics and wide-gap semiconductors exposed to a non-resonant ultrashort laser pulse with a stabilized carrier-envelope phase. In order to describe strong-field electron dynamics,…

材料科学 · 物理学 2016-08-05 Stanislav Yu. Kruchinin , Michael Korbman , Vladislav S. Yakovlev

In this work, we discuss the nature of Dzyaloshinskii-Moriya interaction (DMI) in transition metal heterostructures. We first derive the expression of DMI in the small spatial gradient limit using Keldysh formalism. This derivation provides…

介观与纳米尺度物理 · 物理学 2021-01-04 Ahmed Hajr , Abdulkarim Hariri , Guilhem Manchon , Sumit Ghosh , Aurelien Manchon

Bloch-Boltzmann transport theory fails to describe the carrier diffusion in current crystalline organic semiconductors, where the presence of large-amplitude thermal molecular motions causes substantial dynamical disorder. The charge…

材料科学 · 物理学 2020-01-08 S. Fratini , S. Ciuchi

We develop a scattering theory of current-induced forces exerted by the conduction electrons of a general mesoscopic conductor on slow "mechanical" degrees of freedom. Our theory describes the current-induced forces both in and out of…

介观与纳米尺度物理 · 物理学 2011-07-12 Niels Bode , Silvia Viola Kusminskiy , Reinhold Egger , Felix von Oppen

Strongly correlated materials are expected to feature unconventional transport properties, such that charge, spin, and heat conduction are potentially independent probes of the dynamics. In contrast to charge transport, the measurement of…

We report a scattering matrix theory for dynamic and nonlinear transport in coherent mesoscopic conductors. In general this theory allows predictions of low frequency linear dynamic conductance, as well as weakly nonlinear DC conductance.…

凝聚态物理 · 物理学 2009-10-30 Zhong-shui Ma , Jian Wang , Hong Guo

We consider diffusive lattice gases on a ring and analyze the stability of their density profiles conditionally to a current deviation. Depending on the current, one observes a phase transition between a regime where the density remains…

统计力学 · 物理学 2009-11-11 T. Bodineau , B. Derrida

The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements…

其他凝聚态物理 · 物理学 2008-03-26 Mike W. Denhoff

We present a computationally efficient method to obtain the spectral function of bulk systems in the framework of steady-state density functional theory (i-DFT) using an idealized Scanning Tunneling Microscope (STM) setup. We calculate the…

强关联电子 · 物理学 2020-11-30 David Jacob , Gianluca Stefanucci , Stefan Kurth

Organic dopants are frequently used to surface-dope inorganic semiconductors. The resulted hybrid inorganic-organic materials have a crucial role in advanced functional materials and semiconductor devices. In this article, we study charge…

材料科学 · 物理学 2017-08-01 Xiaoming Wang , Keivan Esfarjani , Mona Zebarjadi

We present a theoretical approach to describing the Mott transition of electrons on a two dimensional lattice that begins with the low energy effective theory of the Fermi liquid. The approach to the Mott transition must be characterized by…

强关联电子 · 物理学 2012-01-25 David F. Mross , T. Senthil