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相关论文: A double quantum dot memristor

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An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, $I(t)$, its resistance $R_M(q)$ depends {\it only} on the charge $q$ that has flowed through it, so that its voltage response is…

介观与纳米尺度物理 · 物理学 2019-09-18 Y. V. Pershin , M. Di Ventra

We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the…

介观与纳米尺度物理 · 物理学 2013-04-17 Sergey E. Savel'ev , Fabio Marchesoni , Alexander M. Bratkovsky

The advent of reliable, nanoscale memristive components is promising for next generation compute-in-memory paradigms, however, the intrinsic variability in these devices has prevented widespread adoption. Here we show coherent electron wave…

Memristors, uniquely characterized by their pinched hysteresis loop fingerprints, have attracted significant research interest over the past decade, due to their enormous potential for novel computation and artificial intelligence…

应用物理 · 物理学 2025-08-07 Erion Uka , Chun Zhao

Emerging non-volatile memory (NVM), or memristive, devices promise energy-efficient realization of deep learning, when efficiently integrated with mixed-signal integrated circuits on a CMOS substrate. Even though several algorithmic…

神经与进化计算 · 计算机科学 2018-04-23 Vishal Saxena , Xinyu Wu , Kehan Zhu

In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most…

新兴技术 · 计算机科学 2026-01-14 Valeriy A. Slipko , Alon Ascoli , Fernando Corinto , Yuriy V. Pershin

Conventional neuro-computing architectures and artificial neural networks have often been developed with no or loose connections to neuroscience. As a consequence, they have largely ignored key features of biological neural processing…

Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…

材料科学 · 物理学 2015-05-13 P. Krzysteczko , G. Reiss , A. Thomas

Recently there has been a great deal of interest on the possibility to exploit quantum-mechanical effects to increase the performance of energy storage systems. Here we introduce and solve a model of a quantum supercapacitor. This consists…

介观与纳米尺度物理 · 物理学 2019-09-04 Dario Ferraro , Gian Marcello Andolina , Michele Campisi , Vittorio Pellegrini , Marco Polini

The prediction made by L. O. Chua 45+ years ago (see: IEEE Trans. Circuit Theory (1971) 18:507-519 and also: Proc. IEEE (2012) 100:1920-1927) about the existence of a passive circuit element (called memristor) that links the charge and flux…

新兴技术 · 计算机科学 2017-03-14 Wieslaw Marszalek , Zdzislaw Trzaska

Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in large arrays, studies in ensembles of devices are comparatively…

应用物理 · 物理学 2022-04-06 Vasileios Manouras , Spyros Stathopoulos , Alex Serb , Themis Prodromakis

The value memristor devices offer to the neuromorphic computing hardware design community rests on the ability to provide effective device models that can enable large scale integrated computing architecture application simulations.…

介观与纳米尺度物理 · 物理学 2016-11-18 Nathan R. McDonald , Robinson E. Pino , Peter J. Rozwood , Bryant T. Wysocki

Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…

介观与纳米尺度物理 · 物理学 2012-09-24 Carsten Timm , Massimiliano Di Ventra

Realizing a quantum transistor built of molecules or quantum dots has been one of the most ambitious challenges in nanotechnology. Even though remarkable progress has been made, being able to gate and control nanometer scale objects, as…

介观与纳米尺度物理 · 物理学 2012-11-06 Carlos A. Busser , Adrian E. Feiguin

The review of studies on memristive properties or effect of resistive switchings in four classes of high temperature superconductors is presented in order to reveal functional properties of HTSCs which become apparent in the effects under…

材料科学 · 物理学 2018-01-30 N. A. Tulina

Cuprate superconductors are strongly sensitive materials to disorder and oxygen stoichiometry; even minute variations of those parameters drastically change their electronic properties. Here we exploit this characteristic to engineer a…

We show that a double quantum-dot system made of diluted magnetic semiconductor behaves unlike usual molecules. In a semiconductor double quantum dot or in a diatomic molecule, the ground state of a single carrier is described by a…

其他凝聚态物理 · 物理学 2009-11-11 Wei Zhang , Tianming Dong , Alexander O. Govorov

An implementation of a universal solid-state quantum register based on electron space states in field-defined double quantum dots (DQD possesses one electron in two adjacent tunnel bound dots) in an ultrathin semiconductor nanowire is…

介观与纳米尺度物理 · 物理学 2025-07-14 Vladimir Vyurkov , Leonid Fedichkin , Igor Semenikhin , Denis Drozhzhin , Konstantin Rudenko , Vladimir Lukichev

Reasoned by its dynamical behavior, the memristor enables a lot of new applications in analog circuit design. Since some realizations are shown (e.g. 2007 by Hewlett Packard), the development of applications with memristors becomes more and…

材料科学 · 物理学 2013-02-19 Oliver Pabst , Torsten Schmidt

A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and…