相关论文: Hysteretic phenomena in GFET: general theory and e…

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…

A model for the rival mechanisms of hysteresis in graphene channel resistivity on a substrate of different nature dependence on a gate voltage - a direct one (caused by adsorbates with dipole moment on surface and interface) and an inverse…

Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the…

A transition in source-drain current vs back gate voltage ID - VBG characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin…

Hysteretic gate responses of two-dimensional material heterostructures serve as sensitive probes of the underlying electronic states and hold significant promise for the development of novel nanoelectronic devices. Here we identify a new…

In this report, the hysteresis behaviors of PEI:LiClO4 and PEG:LiClO4 electrolyte gate and back gate Graphene-on-SiO2 FET were analyzed by gate-voltage source-drain current modulation. It is shown that both the sweeping rate and the sweep…

Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate…

The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect…

We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent…

Hysteresis and memory effects in graphene field-effect transistors (GFETs) offer unique opportunities for neuromorphic computing, sensing, and memory applications, yet their physical origins remain debated due to competing volatile and…

Hysteresis exhibited by current-voltage characteristics during field-emission experiments is often considered undesirable in terms of practical applications. However, this is an appealing effect for the purposes of memristive devices. We…

We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O_3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectric with k up to 100. An unusual resistance hysteresis occurs…

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…

We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for…

We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs.…

Electron devices based on graphene have lately received a considerable interest; in fact, they could represent the ultimate miniaturization, since the active area is only one atom tick. However, the gapless dispersion relation of graphene…

Hydrodynamic electrons in high-mobility graphene devices have demonstrated great potential in establishing an electronic analogue of relativistic quantum fluid in solid-state systems. One of the key requirements for observing viscous…

We report on gate hysteresis in resistance on high quality graphene/h-BN devices. We observe a thermal activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375K. In order to investigate…

In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…

Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the…