相关论文: Optimisation of High Efficiency AlGaAs MQW Solar C…

Solar cells manufactured on top of Ge substrates suffer from inherent drawbacks that hinder or limit their potential. The most deleterious ones are heavy weight, high bulk recombination, lack of photon confinement and an increase of the…

The enhancement of power conversion efficiency beyond the theoretical limit of single-junction solar cells is a key objective in the advancement of hot carrier solar cells. Recent findings indicate that quantum wells (QWs) can effectively…

III-V nanostructures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical…

This study investigates a four-terminal mechanically stacked double junction photovoltaic device based on GaAs as a top subcell and Si as a bottom subcell. Unlike two terminal monolithically series connected double junction photovoltaics,…

Prototypes for hot-carrier solar cells based on type-II InAs/AlAsSb multiple quantum wells are examined for AC photoconductivity as a function of lattice temperature and photoexcitation energy to determine the photoexcited charge carrier…

We investigated the carrier and light trapping in GaInAs/AlGaAs single quantum well laser structures by means of time resolved photoluminescence and Raman spectroscopy. The influence of the shape and depth of the confinement potential and…

The quantum well solar cell (QWSC) has been proposed as a route to higher efficiency than that attainable by homojunction devices. Previous studies have established that carriers escape the quantum wells with high efficiency in forward bias…

Transition metal dichalcogenides (TMDs) show great promise as absorber materials in high-specific-power (i.e. high-power-per-weight) solar cells, due to their high optical absorption, desirable band gaps, and self-passivated surfaces.…

Using high resolution scanning transmission electron microscopy and low-loss electron energy loss spectroscopy, we correlate the local bandgap (Eg), indium concentration, and strain distribution across multiple InxGa1-xAs quantum wells…

In this work, we propose an efficient quantum-enhanced solid-state photocell based on GaN quantum dots. We exploit the strong built-in electric field in GaN QDs and excitonic dipole-dipole coupling between adjacent QDs to break detailed…

We study the structural, optical, and transport properties of sidewall quantum wires on GaAs(001) substrates. The QWRs are grown by molecular beam epitaxy (MBE) on GaAs(001) substrates prepatterned with shallow ridges. They form as a…

Reducing the thickness of Cu(In,Ga)Se2 solar cells is a key objective in order to reduce production cost and to improve sustainability. The major challenge for sub-micron Cu(In,Ga)Se2 cells is the recombination at the backside. In standard…

The use of low-dimensional structures such as quantum wells, wires or dots in the absorbing regions of solar cells strongly affects the spectral response of the latter, the spectral properties being drastically modified by quantum…

The recent progress on (Si)GeSn optoelectronic devices holds a great promising for photonic integration on the Si substrate. In parallel to the development of bulk devices, the (Si)GeSn based quantum wells (QWs) have been investigated…

Achieving uniform nanowire size, density, and alignment across a wafer is challenging, as small variations in growth parameters can impact performance in energy harvesting devices like solar cells and photodetectors. This study demonstrates…

To date, high efficiency multijunction solar cells have been developed on Ge or GaAs substrates for space applications, and terrestrial applications are hampered by high fabrication costs. In order to reduce this cost, we propose a…

Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism. Evaluation of the local…

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk…

We present a theoretical analysis of the electronic properties of type-II GaAs$_{1-x}$Sb$_{x}$/GaAs quantum rings (QRs), from the perspective of applications in intermediate band solar cells (IBSCs). We outline the analytical solution of…

There remains wide interest in solar cells being made using inexpensive materials and simple device manufacturing techniques to harvest ever-increasing amounts of energy. New semiconductor materials and new quantum nanostructures are…