相关论文: Optimisation of High Efficiency AlGaAs MQW Solar C…

Modelocked lasers operating at 2-3 um wavelength region are interesting for various spectroscopic applications. To this end, GaSb-based semiconductor saturable absorber mirrors (SESAMs) are developing fast as a practical technology for…

Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum…

Poor electrical conductivity and large volume expansion during repeated charge and discharge is what has characterized many battery electrode materials in current use. This has led to 2D materials, specifically multi-layered 2D systems,…

We present a systematic theoretical study of the multi-photon nonlinear optical absorption properties of a $\text{GaAs/A}{{\text{l}}_{x}}\text{G}{{\text{a}}_{1-x}}\text{As}$ based quantum well (QW) structure with Morse confinement potential…

Maximizing the power conversion efficiency of solar cells plays a crucial role in upscaling solar energy production. Combining two or more solar cells with different bandgaps into a multi-junction tandem solar cells lowers thermalization…

Photogalvanic solar cells, the original dye based solar cell, have yet to fulfill their promise as a low fabrication cost, scalable energy conversion system. The efficient performance of photogalvanic cells relies on high dye solubility and…

The luminescence and inner structure of GaAs-AlGaAs quantum well tube (QWT) nanowires were studied using low-temperature cathodoluminescence (CL) spectroscopic imaging, in combination with scanning transmission electron microscopy (STEM)…

Transition metal dichalcogenide (TMD) materials have emerged as promising candidates for thin film solar cells due to their wide bandgap range across the visible wavelengths, high absorption coefficient and ease of integration with both…

Ab initio self-consistent total energy calculations using second order Moller-Plesset perturbation theory and Hay-Wadt effective core potentials with associated basis sets (HWECP's) for gallium and arsenic have been used to investigate the…

GaN is a wide-bandgap semiconductor used in high-efficiency LEDs and solar cells. The solid is produced industrially at high chemical purities by deposition from a vapour phase, and oxygen may be included at this stage. Oxidation represents…

We demonstrate the optical absorption has been enhanced in the small molecule organic solar cells by employing trapezoid grating structure. The enhanced absorption is mainly attributed to both waveguide modes and surface plasmon modes,…

The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/Al$_{x}$Ga$_{1-x}$As/GaAs is researched. The problem is…

Oxidation of two-dimensional (2D) layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low-power electronic devices. Gallium (II) sulfide ($\beta$-GaS), a hexagonal…

Bismide semiconductor materials and heterostructures are considered a promising candidate for the design and implementation of photonic, thermoelectric, photovoltaic, and spintronic devices. This work presents a detailed theoretical study…

The exploration of photonic systems for quantum information processing has generated widespread interest in multiple cutting-edge research fields. Photonic frequency encoding stands out as an especially viable approach, given its natural…

In recent years, Gallium Arsenide (GaAs) type photocathodes have become widely used as electron sources in modern Energy Recovery Linac based light sources such as the Accelerators and Lasers in Combined Experiments (ALICE) at Daresbury…

The electronic and optical properties of CdGa2Te4 and ZnGa2Te4 were studied using first-principles DFT calculations. Band gaps were calculated using the GGA-PBESol functional. Both materials show promise for photovoltaic applications…

InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and…

We calculate using the Boltzmann transport theory the density dependent mobility of two-dimensional (2D) electrons in GaAs, SiGe and AlAs quantum wells as well as of 2D holes in GaAs quantum wells. The goal is to precisely understand the…

We demonstrate that coupled AlGaN/GaN quantum wells with asymmetric widths ($L_1-L_2<30 $ A achieve up to 4.5 times higher mobility than single wells at optimal separation (d = 100 A). Crucially, mobility surpasses single wells when d>40 A…