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相关论文: Optimisation of High Efficiency AlGaAs MQW Solar C…

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We report on the design, realization and characterization of optically pumped micropillar lasers with low-absorbing Al$_{0.2}$Ga$_{0.8}$As/Al$_{0.9}$Ga$_{0.1}$As dielectric Bragg reflectors (DBRs) instead of commonly used GaAs/AlGaAs DBRs.…

Harnessing low energy photons is of paramount importance for multi-junction high efficiency solar cells as well as for thermo-photovoltaic applications. However, semiconductor absorbers with bandgap lower than 0.8 eV have been limited to…

Photovoltaic cells (PVc), as an energy provider to the next generation and the biggest source of renewable energy. Since the last decade improving efficiency and reducing the cost of PVc has been a subject of active research among…

应用物理 · 物理学 2020-08-11 Ankul Prajapati , Bade M H

We report on design, fabrication, and magnetooptical studies of a III-V/II-VI hybrid structure containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The structure design allows one to tune the QW levels into the resonance, thus…

材料科学 · 物理学 2009-11-10 A. A. Toropov , I. V. Sedova , S. V. Sorokin , Ya. V. Terent'ev , E. L. Ivchenko , S. V. Ivanov

We present a model for simulating performance of 3D nano -coaxial and -hemispherical thin film solar cells. The material system considered in these simulations is hydrogenated amorphous silicon (a-Si:H), with solar cells fabricated in an…

材料科学 · 物理学 2015-06-22 T. Kirkpatrick , M. J. Burns , M. J. Naughton

By selective doping (Be) of the well and barrier regions of p-GaAs/AlGaAs structures we have realized the situation where the upper Hubbard band (A+ centers) has been occupied by holes in the equilibrium. We studied temperature behavior of…

介观与纳米尺度物理 · 物理学 2009-11-07 N. V. Agrinskaya , Yu. L. Ivanov , P. V. Petrov , V. M. Ustinov

Alloying small quantities of silver into Cu(In,Ga)Se2 was shown to improve the efficiency for wide and low band gap solar cells. We study low band gap industrial Cu(In,Ga)(S,Se)2 absorbers, substituting less than 10% of the copper with…

Multi-junction photovoltaics provide a logical method of increasing the utilization of solar power for a given area. However, their current design and fabrication methods invoke numerous material and cost complexities that limit their…

光学 · 物理学 2014-12-08 Ze'ev R. Abrams

Trench defects in multi-quantum wells (MQWs) have been considered as flawed structures that severely degrade the internal quantum efficiency of light-emitting diodes (LEDs) in the past. In this research, trench defects are innovatively…

材料科学 · 物理学 2024-07-19 Z. Pan , Z. Chen , H. Zhang , H. Yang , Y. Chen , J. Nie , C. Deng , B. Dong , D. Wang , Y. Li , H. Lin , W. Chen , F. Jiao , X. Kang , C. Jia , Z. Liang , Q. Wang , G. Zhang , B. Shen

III-V materials show a wide range of gaps making them ideal for the design of high efficiency solar cells. This chapter reviews relevant growth methods and material properties of these materials and discusses methods of combining…

材料科学 · 物理学 2013-01-08 James P. Connolly , Denis Mencaraglia

The improvement of light absorption in Si/BeSe$_{0.41}$Te$_{0.59}$ heterostructures for solar cell applications is studied theoretically. First, using simple approaches we found that light absorption could be improved in a single…

介观与纳米尺度物理 · 物理学 2007-05-23 T. Sandu , W. P. Kirk

We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms related to efficiency loss are independently examined,…

A design strategy for achieving broadband optical gain in GaSb-based semiconductor amplifiers operating beyond 2 \mu m is presented. By employing asymmetric GaInSb/AlGaAsSb quantum wells (QWs) of varying thicknesses, a flat and wide gain…

A two-dimensional model was developed to simulate the optoelectronic characteristics of indium-gallium-nitride (InGaN), thin-film, Schottky-barrier solar cells. The solar cells comprise a window, designed to reduce the reflection of…

应用物理 · 物理学 2018-09-18 Tom H. Anderson , Akhlesh Lakhtakia , Peter B. Monk

The integration of optomechanics and optoelectronics in a single device opens new possibilities for developing information technologies and exploring fundamental phenomena. Gallium arsenide (GaAs) is a well-known material that can bridge…

We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. Surprisingly, the effective mass, obtained from the period of microwave-induced resistance…

介观与纳米尺度物理 · 物理学 2013-05-09 A. T. Hatke , M. A. Zudov , J. D. Watson , M. J. Manfra , L. N. Pfeiffer , K. W. West

For designing an efficient terahertz (THz) emitter, the defect density of the semiconductors is smartly increased to reduce carrier lifetime, which subsequently lowers the overall power output of the semiconductor. To overcome this…

Many advanced solar cell concepts propose surpassing the Shockley Queisser (SQ) limit by introducing multiple quasi-Fermi level separations that are arranged in series and/or in parallel. Exceeding the SQ limit with any parallel arrangement…

应用物理 · 物理学 2019-11-06 Andreas Pusch , Nicholas J. Ekins Daukes

Low cost, highly efficient, and stable solar cells demand low temperature processing, less stringent criteria on materials, and possibility of dynamic recovery from long term degradation: a combination of features unachievable from the…

应用物理 · 物理学 2021-04-07 Nithin Chatterji , Swasti Bhatia , Anil Kumar , Aldrin Antony , Pradeep R. Nair

Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has…