相关论文: Optimisation of High Efficiency AlGaAs MQW Solar C…
The honeycomb connection of carbon atoms by covalent bonds in a macroscopic two-dimensional scale leads to fascinating graphene and solar cell based on graphene/silicon Schottky diode has been widely studied. For solar cell applications,…
We argue that alternating-layer structures of lattice mismatched or misaligned (twisted) atomically-thin layers should be expected to be more efficient absorbers of the broad-spectrum of solar radiation than the bulk material of each…
Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high…
Integrated photonics provides a powerful approach for developing compact, stable and scalable architectures for the generation, manipulation and detection of quantum states of light. To this end, several material platforms are being…
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by…
Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 $\mu$m optical communication systems. Incorporating dilute amounts of Bismuth (Bi) into GaAs reduces the…
Solar energy is the most convenient and reliable energy source among all renewable energy resources and an efficient photovoltaic device is required to convert this energy into utilizable energy. Different types of solar cells (SC) are…
Organic-inorganic halide perovskite materials have emerged as attractive alternatives to conventional solar cell building blocks. Their high light absorption coefficients and long diffusion lengths suggest high power conversion efficiencies…
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of…
We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3)) quantum well system. Conventional material systems have matured into successful…
We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the…
Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large $\chi^\left(2\right)$ and $\chi^\left(3\right)$ optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it…
Elemental selenium is a promising wide-bandgap ($E_\mathrm{G}\approx$ 1.95 eV) photovoltaic material for the next generation of thin-film solar cells. To realize high-efficiency selenium solar cells, it is crucial to optimize the…
We investigate physics based design of colloidal quantum dot (CQD) solar cells using self-consistent computational modeling. The significance of band alignment engineering and optimized carrier mobility are quantitatively explored as a…
AlGaAs is a promising integrated nonlinear photonics material with enormous optical nonlinearity and high refractive index. Nevertheless, presently AlGaAs microring resonators exhibiting high quality factors and tight optical confinement…
Here we investigate the use of single-junction InGaAs airbridge cells (ABCs) at elevated power densities. Such conditions are relevant to many thermophotovoltaic (TPV) applications, ranging from space to on-demand renewable electricity, and…
The paper proposes a theoretical approach to modeling the key characteristics of highly efficient gallium arsenide-based solar cells (SCs), using a one-dimensional SC model. The following recombination mechanisms are considered in the…
We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped…
Thermalization losses in Laser Power Converters for the first transmission window occur due to the energy difference between 808 nm wavelength photons and the GaAs bandgap energy which results in lower efficiency. In this work, we analyze…
In-plane semiconductor nanowires with complex branched geometries, prepared via selective area growth (SAG), offer a versatile platform for advanced electronics, optoelectronics, and quantum devices. However, defects and disorder at the…