相关论文: Optimisation of High Efficiency AlGaAs MQW Solar C…

We present a multiscale approach for modeling an intermediate-band solar cell based on a GaAs-GaAlAs quantum dot superlattice of cubic symmetry. Our framework combines high-accuracy theoretical calculations of the superlattice band…

The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications…

Quantum dot solar cells (QDSC) are widely acknowledged to be one of the best solar energy harvesting devices in the present world. Absorber layer is a core component of a QDSC with a strong influence on its operational efficiency. Hence, we…

The growth-diection quantization of confined electron gas in a GaAs/AlGaAs based quantum well structure is obtained in the Kohn-Sham iterative computational scheme. The longitudinal conductance at low temperatures, in the presence of…

In this paper, a novel lateral quantum well solar cell has been introduced, and the structural parameters effects of these nano-structures on the performance of the device have been investigated. For modeling, the continuity equation has…

This paper proposes an efficient three-layered p-GaAs/p-CIGS/n-CdS (PPN), a unique solar cell architecture. Copper indium gallium selenide (CIGS)-based solar cells exhibit substantial performance than the ones utilizing cadmium sulfide…

Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot…

A high theoretical efficiency of 47.2% was achieved by a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in a simulated quadruple junction solar cell under 1 sun concentration. The electronic…

Intermediate band solar cells (IBSCs) pursue the increase in efficiency by absorbing below-bandgap energy photons while preserving the output voltage. Experimental IBSCs based on quantum dots have already demonstrated that both…

In this work, performance and characteristics of AlGaN/AlGaN deep-ultraviolet light-emitting diodes (DUV LEDs) with varied number of quantum-well (QW) are investigated numerically. From our simulation, 1-QW structure give the best…

We calculate the band structure of a two-dimensional GaAs/AlGaAs superlattice and estimate the ultimate efficiency of solar cells using this type of structure for solar energy conversion. The superlattice under consideration consists of…

With the aim of improving solar cell efficiency, a structure for realizing electron tunneling from In0.6Al0.4As quantum dots (QDs) through an Al0.4Ga0.6As barrier to AlAs has been grown using molecular beam epitaxy. The photoluminescence…

Photovoltaic materials are recognized for their potential as sustainable energy sources that enable the conversion between light and electrical energy. However, solar cells have been unable to surpass the theoretical limit of 32%, known as…

Solar cells employing quantum wells can enhance the light absorption but suffer from the difficulty in photogenerated carrier extraction. Here, we analyzed the spectral response and the photocarrier collection mechanism of p-i-n multiple…

We propose a new intermediate band GaAs solar cell comprising an AlxGa1-xAs absorber with built-in GaSb type-II quantum dots (QDs) [a gradual AlxGa1-xAs absorber with built-in AlyGa1-ySb QDs (0<x=y<0.40) as a variant] separated from the…

Epitaxially-grown quantum well and quantum dot solar cells suffer from weak light absorption, strongly limiting their performance. Light trapping based on optical resonances is particularly relevant for such devices to increase light…

We study theoretically the performance of electrically pumped self-organized quantum dots as a gain material in the mid-IR range at room temperature. We analyze an AlGaAs/InGaAs based structure composed of dots-in-a-well sandwiched between…

Like many optoelectronics, the highest quality III-V solar cells start out as thin single-crystalline multilayers on GaAs substrates. Separating these device layers from their growth substrate enables higher performing devices and wafer…

Utilizing a novel carbon doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2…

This study underscores the pivotal role of sodium (Na) supply in optimizing the optoelectronic properties of wide bandgap (~1.6 eV) Cu(In,Ga)S2 (CIGS) thin film absorbers for high efficiency solar cells. Our findings demonstrate that the…