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相关论文: AA-stacked Bilayer Graphene Quantum Dots in Magnet…

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The quantum Hall effect near the charge neutrality point in bilayer graphene is investigated in high magnetic fields of up to 35 T using electronic transport measurements. In the high field regime, the eight-fold degeneracy in the zero…

介观与纳米尺度物理 · 物理学 2015-05-14 Y. Zhao , P. Cadden-Zimansky , Z. Jiang , P. Kim

The band structure of Bernal-stacked bilayer graphene can be tuned using double-gated transistors to apply a perpendicular electric field that generates an interlayer potential energy difference $\Delta$. Dielectric breakdown limits the…

介观与纳米尺度物理 · 物理学 2026-01-28 Margherita Melegari , Brian Skinner , Ignacio Gutierrez-Lezama , Alberto F. Morpurgo

Twisted bilayer graphene is an exciting platform for exploring correlated quantum phases, extremely tunable with respect to both the single-particle bands and the interaction profile of electrons. Here, we investigate the phase diagram of…

强关联电子 · 物理学 2023-12-08 Nikita Astrakhantsev , Glenn Wagner , Tom Westerhout , Titus Neupert , Mark H. Fischer

Broken-symmetry quantum Hall (QH) states with filling factors \nu=0, \pm 1, \pm 2, \pm 3 in the lowest Landau level in bilayer graphene are analyzed by solving the gap equation in the random phase approximation. It is shown that in the…

强关联电子 · 物理学 2012-01-20 E. V. Gorbar , V. P. Gusynin , Junji Jia , V. A. Miransky

Utilizing the Baym-Kadanoff formalism with the polarization function calculated in the random phase approximation, the dynamics of the $\nu=0$ quantum Hall state in bilayer graphene is analyzed. Two phases with nonzero energy gap, the…

强关联电子 · 物理学 2010-04-27 E. V. Gorbar , V. P. Gusynin , V. A. Miransky

We study electronic properties of AA-stacked graphene bilayers. In the single-particle approximation such a system has one electron band and one hole band crossing the Fermi level. If the bilayer is undoped, the Fermi surfaces of these…

强关联电子 · 物理学 2014-08-05 A. O. Sboychakov , A. V. Rozhkov , A. L. Rakhmanov , Franco Nori

We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…

介观与纳米尺度物理 · 物理学 2020-04-22 Luca Banszerus , Samuel Möller , Eike Icking , Kenji Watanabe , Takashi Taniguchi , Christian Volk , Christoph Stampfer

We report transport experiments on graphene quantum dots. We focus on excited state spectra in the near vicinity of the charge neutrality point and signatures of the electron-hole crossover as a function of a perpendicular magnetic field.…

介观与纳米尺度物理 · 物理学 2009-11-19 J. Guettinger , C. Stampfer , T. Frey , T. Ihn , K. Ensslin

Under a magnetic field perpendicular to an monolayer graphene, the existence of a two-dimensional periodic scatter array can not only mix Landau levels of the same valley for displaying split electron-hole Hofstadter-type energy spectra,…

介观与纳米尺度物理 · 物理学 2019-02-20 Danhong Huang , Andrii Iurov , Godfrey Gumbs , Liubov Zhemchuzhna

Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene…

介观与纳米尺度物理 · 物理学 2007-11-26 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos

Gapless spectrum of graphene allows easy spatial separation of electrons and holes with an external in-plane electric field. Guided collective plasmon modes can propagate along the separation line, whose amplitude decays with the distance…

介观与纳米尺度物理 · 物理学 2012-05-23 N. M. Hassan , V. V. Mkhitaryan , E. G. Mishchenko

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer,…

介观与纳米尺度物理 · 物理学 2011-11-08 S. H. Jhang , M. F. Craciun , S. Schmidmeier , S. Tokumitsu , S. Russo , M. Yamamoto , Y. Skourski , J. Wosnitza , S. Tarucha , J. Eroms , C. Strunk

The important experimental advances in graphene fabrication and its peculiar transport properties motivated researchers to utilize graphene as a potential basis for the next generation of fast and smart electronic devices. In this article,…

介观与纳米尺度物理 · 物理学 2018-05-29 Hasan M. Abdullah , H. Bahlouli

We study the effects of a magnetic flux and an inhomogeneous gap on the energy spectrum of graphene magnetic quantum dots (GMQDs). By considering the Dirac equation in the infinite mass framework, we can analytically obtain eigenspinor…

介观与纳米尺度物理 · 物理学 2024-05-28 Mohammed El Azar , Ahmed Bouhlal , Ahmed Jellal

We calculate the electronic band structure of ABA-stacked trilayer graphene in the presence of external gates, using a self-consistent Hartree approximation to take account of screening. In the absence of a gate potential, there are…

介观与纳米尺度物理 · 物理学 2009-11-13 Mikito Koshino , Edward McCann

Monolayer graphene placed with a twist on top of AB-stacked bilayer graphene hosts topological flat bands in a wide range of twist angles. The dispersion of these bands and gaps between them can be efficiently controlled by a perpendicular…

强关联电子 · 物理学 2020-08-05 Louk Rademaker , Ivan Protopopov , Dmitry Abanin

We investigate the interplay of in-plane magnetic and transverse electric fields in AB-stacked bilayer graphene. In prior work, we demonstrated that this configuration induces an insulator-metal (IM) transition with large impact on the…

介观与纳米尺度物理 · 物理学 2026-03-27 Amarnath Chakraborty , Aleksandr Rodin , Shaffique Adam , Giovanni Vignale

We consider confinement of Dirac fermions in $AB$-stacked bilayer graphene by inhomogeneous on-site interactions, (pseudo-)magnetic field or inter-layer interaction. Working within the framework of four-band approximation, we focus on the…

介观与纳米尺度物理 · 物理学 2022-01-12 Miguel Castillo-Celeita , Vít Jakubský , Kevin Zelaya

The inhomogenous real-space electronic structure of gapless and gapped disordered bilayer graphene is calculated in the presence of quenched charge impurities. For gapped bilayer graphene we find that for current experimental conditions the…

介观与纳米尺度物理 · 物理学 2015-03-19 E. Rossi , S. Das Sarma

Minimally twisted bilayer graphene in the presence of an interlayer bias develops a triangular network of valley chiral modes that propagate along the $AB/BA$ interfaces and scatter at the $AA$ regions. The low energy physics of the…

介观与纳米尺度物理 · 物理学 2023-12-07 P. Wittig , F. Dominguez , C. De Beule , P. Recher