相关论文: Memristive fingerprints of electric arcs

Hysteresis exhibited by current-voltage characteristics during field-emission experiments is often considered undesirable in terms of practical applications. However, this is an appealing effect for the purposes of memristive devices. We…

We investigate the Fourier transform of the current through a memristor when the applied-voltage frequency is smaller than the characteristic memristor frequency, and the memristor shows hysteresis in the current-voltage plane. We find that…

Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage…

Voltage-driven memristive switching has been reported in molecular junctions, yet its microscopic origin often remains elusive. Here, we study three rigid OPE-like derivatives that lack an obvious internal switching pathway using…

A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully understood `capacitive', and `inductive' effects. This work…

Memristors have pinched hysteresis loops in the $V-I$ plane. Ideal memristors are everywhere non-linear, cross at zero and are rotationally symmetric. In this paper we extend memristor theory to produce different types of non-ideality and…

While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis).…

A memristor is often identified by showing its distinctive pinched hysteresis curve and testing for the effect of frequency. The hysteresis size should relate to frequency and shrink to zero as the frequency approaches infinity. Although…

Co(x nm, x=10nm or 40nm)/Cu(5nm)/Co(2.5nm) layers were deposited between copper electrodes in SiO2 vias. Magnetic states, and the corresponding resistance states, of these devices were switched by electric currents perpendicular to the…

A graphical representation based on the isothermal current-voltage (IV) measurements of typical memristive interfaces is presented. This is the starting point to extract relevant microscopic information of the parameters that control the…

Memristors, uniquely characterized by their pinched hysteresis loop fingerprints, have attracted significant research interest over the past decade, due to their enormous potential for novel computation and artificial intelligence…

This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…

We have carried out calculations of current-voltage characteristics for the electron tunnel current through a junction with a thin insulating ferroelectric barrier assuming that interface transmissions for the left and right interfaces…

Memristors have been compared to neurons (usually specifically the synapses) since 1976 but no experimental evidence has been offered for support for this position. Here we highlight that memristors naturally form fast-response, highly…

Stochastic behaviors of resistive random access memory (RRAM) play an important role in the design of cross-point memory arrays. A Monte Carlo compact model of oxide RRAM is developed and calibrated with experiments on various device stack…

This short note clarifies that the "pinched hysteresis loop" fingerprint of a memristor, or a memristive device, must hold for all amplitudes, for all frequencies, and for all initial conditions, of any periodic testing waveform, such as…

We found that the current-voltage characteristics of the single-layer graphene field-effect transistors exhibit an intriguing feature - an abrupt change of the current near zero gate bias at elevated temperatures T > 500 K. The strength of…

There are essential achievements in synthesis of interesting for creation of compact electronic memory switched by own current structures of spin valves and magnetic tunnel junctions with hysteretic current dependences of resistance. In the…

Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…

Shape Memory Alloys (SMAs) are a class of smart materials that exhibit a macroscopic contraction of up to 5% when heated via an electric current. This effect can be exploited for the development of novel unconventional actuators. Despite…