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相关论文: Making Consistent Contacts to Graphene: Effect of …

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A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact.…

Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole…

介观与纳米尺度物理 · 物理学 2015-05-27 Dionisis Berdebes , Tony Low , Yang Sui , Joerg Appenzeller , Mark Lundstrom

Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties…

材料科学 · 物理学 2013-04-26 Kosuke Nagashio , Akira Toriumi

The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not…

介观与纳米尺度物理 · 物理学 2019-02-20 Filippo Giubileo , Antonio Di Bartolomeo

The mechanical integrity of composite materials depends primarily on the interface strength and the defect density of the reinforcement which is the provider of enhanced strength and stiffness. In the case of graphene/ polymer…

Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of…

In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying widths and separation between contacts have been fabricated…

材料科学 · 物理学 2022-11-23 Amit Gahoi , Stefan Wagner , Andreas Bablich , Satender Kataria , Vikram Passi , Max C. Lemme

The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a…

介观与纳米尺度物理 · 物理学 2013-12-17 Wei Sun Leong , Hao Gong , John T. L. Thong

Graphene is a material with potential applications in electric, thermal, and mechanical fields, and has seen significant advancements in growth methods that facilitate large-scale production. However, defects during growth and transfer to…

材料科学 · 物理学 2025-12-30 Suyeong Jin , Jung-Wuk Hong , Chiara Daraio , Alexandre F. Fonseca

Graphene has been extensively studied for a variety of electronic and optoelectronic applications. The reported contact resistance between metal and graphene, or rather its specific contact resistance (R{_C}), ranges from a few tens of…

应用物理 · 物理学 2024-08-15 Vikas Jangra , Satender Kataria , Max C. Lemme

Here we report a facile method to generate a high density of point defects in graphene on metal foil and show how the point defects affect the electronic structures of graphene layers. Our scanning tunneling microscopy (STM) measurements,…

介观与纳米尺度物理 · 物理学 2013-10-08 Hui Yan , Cheng-Cheng Liu , Ke-Ke Bai , Xuejiao Wang , Mengxi Liu , Wei Yan , Lan Meng , Yanfeng Zhang , Zhongfan Liu , Jia-Cai Nie , Yugui Yao , Lin He

The contact properties between metal and graphene were examined. The electrical measurement on a multiprobe device with different contact areas revealed that the current flow preferentially entered graphene at the edge of the contact metal.…

材料科学 · 物理学 2015-05-19 K. Nagashio , T. Nishimura , K. Kita , A. Toriumi

Graphene is a very promising material for nanoelectronics applications due to its unique and remarkable electronic and thermal properties. However, when deposited on metallic electrodes the overall thermal conductivity is significantly…

Edge contact geometries are thought to yield ultralow contact resistances in most non-ferromagnetic metal-graphene interfaces owing to their large metal-graphene coupling strengths. Here, we examine the contact resistance of edge- versus…

材料科学 · 物理学 2017-06-30 Khoong Hong Khoo , Wei Sun Leong , John T. L. Thong , Su Ying Quek

We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact…

介观与纳米尺度物理 · 物理学 2015-05-13 S. Russo , M. F. Craciun , M. Yamamoto , A. F. Morpurgo , S. Tarucha

Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact…

We explore the effects of metal contacts on the operation and scalability of 2D Graphene Field-Effect-Transistors (GFETs) using detailed numerical device simulations based on the non-equilibrium Green's function formalism self-consistently…

介观与纳米尺度物理 · 物理学 2015-05-28 Pei Zhao , Qin Zhang , Debdeep Jena , Siyuranga O. Koswatta

We study the ballistic transmission and the contact resistance ($R_c$) of a graphite-graphene contact in a top contact geometry from first principles. We find that the calculated $R_c$'s depend on the amount of graphene-graphite overlap,…

介观与纳米尺度物理 · 物理学 2018-10-22 Ferran Jovell , Xavier Cartoixà

The density of states (DOS) of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n+-Si contact structure fabricated by a resist-free metal deposition process. Graphene underneath…

材料科学 · 物理学 2013-07-22 Ryota Ifuku , Kosuke Nagashio , Tomonori Nishimura , Akira Toriumi

We perform first-principles calculations of electron transport across a nickel-graphene interface. Four different geometries are considered, where the contact area, graphene and nickel surface orientations and the passivation of the…

介观与纳米尺度物理 · 物理学 2012-05-01 Kurt Stokbro , Mads Engelund , Anders Blom
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