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相关论文: Intrinsic Charge Carrier Mobility in Single-Layer …

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We calculate an electron-phonon scattering and intrinsic transport properties of black phosphorus monolayer using tight-binding and Boltzmann treatments as a function of temperature, carrier density, and electric field. The low-field…

介观与纳米尺度物理 · 物理学 2017-04-12 Yuri Trushkov , Vasili Perebeinos

The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged…

介观与纳米尺度物理 · 物理学 2014-12-11 Zhun-Yong Ong , Gang Zhang , Yong Wei Zhang

The semiconductor BAs has drawn significant interest due to experimental reports of simultaneous high thermal conductivity and ambipolar charge mobility. The \textit{ab~initio} prediction of high electron and hole mobility assumed the…

材料科学 · 物理学 2023-05-09 Iretomiwa Esho , Austin J. Minnich

To date, the intrinsic thermal conductivity tensor of bulk black phosphorus (BP), an important 2D material, is still unknown, since recent studies focus on BP flakes not on bulk BP. Here we report the anisotropic thermal conductivity tensor…

材料科学 · 物理学 2016-11-22 Bo Sun , Xiaokun Gu , Qingsheng Zeng , Xi Huang , Yuexiang Yan , Zheng Liu , Ronggui Yang , Yee Kan Koh

The intrinsic carrier transport dynamics in phosphorene is theoretically examined. Utilizing a density functional theory treatment, the low-field mobility and the saturation velocity are characterized for both electrons and holes in the…

介观与纳米尺度物理 · 物理学 2016-08-24 Zhenghe Jin , Jeffrey T. Mullen , Ki Wook Kim

Out-of-plane vibrations are considered as the dominant factor limiting the intrinsic carrier mobility of suspended two-dimensional materials at low carrier concentrations. Anharmonic coupling between in-plane and flexural phonon modes is…

材料科学 · 物理学 2019-08-14 A. N. Rudenko , A. V. Lugovskoi , A. Mauri , Guodong Yu , Shengjun Yuan , M. I. Katsnelson

The monolayer of black phosphorous, or phosphorene, has recently emerged as a new 2D semiconductor with intriguing highly anisotropic transport properties. Existing calculations of its intrinsic phonon-limited electronic transport…

材料科学 · 物理学 2015-06-24 Bolin Liao , Jiawei Zhou , Bo Qiu , Mildred S. Dresselhaus , Gang Chen

Black phosphorus (BP) exhibits highly anisotropic properties and dynamical behavior that are unique even among two-dimensional and van der Waals (vdW) layered materials. Here, we show that an interlayer lattice contraction and concerted,…

介观与纳米尺度物理 · 物理学 2022-07-27 Mazhar Chebl , Xing He , Ding-Shyue Yang

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…

介观与纳米尺度物理 · 物理学 2008-01-07 S. V. Morozov , K. S. Novoselov , M. I. Katsnelson , F. Schedin , D. C. Elias , J. A. Jaszczak , A. K. Geim

The ab-initio theory of charge transport in semiconductors typically employs the lowest-order perturbation theory in which electrons interact with one phonon (1ph). This theory is accepted to be adequate to explain the low-field mobility of…

材料科学 · 物理学 2023-02-08 Benjamin Hatanpää , Alexander Y. Choi , Peishi S. Cheng , Austin J. Minnich

Due to its corrugated hexagonal lattice structure, Black phosphorus (BP) has unique anisotropic physical properties, which provides an additional freedom for designing devices. Many body interactions, including interactions with phonon, is…

化学物理 · 物理学 2019-07-23 Shengjie Meng , Hongyan Shi , Hu Jiang , Xiudong Sun , Bo Gao

We study the charged impurity limited mobility in black phosphorus, a highly anisotropic layered material. We compute the mobility within the Boltzmann transport equation under detailed balance condition, and taking into account the…

材料科学 · 物理学 2016-04-06 Yue Liu , Tony Low , P. Paul Ruden

As an emerging single elemental layered material with a low symmetry in-plane crystal lattice, black phosphorus (BP) has attracted significant research interest owing to its unique electronic and optoelectronic properties, including its…

The single-layer black phosphorus is characteristic for its puckered structure, which has leaded to highly anisotropy in its optical, electronic, and mechanical properties. We report, using the non-equilibrium Green's function approach and…

材料科学 · 物理学 2015-02-13 Jin-Wu Jiang

We show that black phosphorus has room-temperature charge mobilities on the order of 10$^4$ cm$^2$V$^{-1}$s$^{-1}$, which are about one order of magnitude larger than silicon. We also demonstrate strong anisotropic transport in black…

材料科学 · 物理学 2015-03-31 Jiaqi He , Dawei He , Yongsheng Wang , Qiannan Cui , Matthew Z. Bellus , Hsin-Ying Chiu , Hui Zhao

Anisotropy refers to the property of a material exhibiting directionally dependent features. In this paper, we introduce black phosphorous (BP), the most stable allotrope of phosphorus in layered orthorhombic structure with a bandgap of 0.3…

介观与纳米尺度物理 · 物理学 2014-07-30 Fengnian Xia , Han Wang , Yichen Jia

The carrier mobility of anisotropic two-dimensional (2D) semiconductors under longitudinal acoustic (LA) phonon scattering was theoretically studied with the deformation potential theory. Based on Boltzmann equation with relaxation time…

计算物理 · 物理学 2016-12-28 Haifeng Lang , Shuqing Zhang , Zhirong Liu

Flexural thermal fluctuations in crystalline membranes affect the band structure of the carriers, which leads to an exponential density-of-states (DOS) tail beyond the unperturbed band edge. We present a theoretical description of this tail…

介观与纳米尺度物理 · 物理学 2017-02-01 S. Brener , A. N. Rudenko , M. I. Katsnelson

Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-plane thermal conductivity of suspended few-layer black…

介观与纳米尺度物理 · 物理学 2015-10-20 Zhe Luo , Jesse Maassen , Yexin Deng , Yuchen Du , Richard P. Garrelts , Mark S. Lundstrom , Peide D. Ye , Xianfan Xu

We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the…

介观与纳米尺度物理 · 物理学 2016-12-06 Gen Long , Denis Maryenko , Junying Shen , Shuigang Xu , Jianqiang Hou , Zefei Wu , Wing Ki Wong , Tianyi Han , Jiangxiazi Lin , Yuan Cai , Rolf Lortz , Ning Wang
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