中文
相关论文

相关论文: Intrinsic Charge Carrier Mobility in Single-Layer …

200 篇论文

Recent $\textit{ab initio}$ theoretical calculations of the electrical performance of several two-dimensional materials predict a low-field carrier mobility that spans several orders of magnitude (from 26,000 to 35 cm$^{2}$ V$^{-1}$…

We report on the electronic transport properties of black phosphorus and analyze them using a two-carrier model in a wide range of pressure up to 2.5 GPa. In semiconducting state at 0.29 GPa, the remarkable non-linear behavior in the Hall…

Two-dimensional crystals are emerging materials for nanoelectronics. Development of the field requires candidate systems with both a high carrier mobility and, in contrast to graphene, a sufficiently large electronic bandgap. Here we…

材料科学 · 物理学 2014-07-08 Jingsi Qiao , Xianghua Kong , Zhi-Xin Hu , Feng Yang , Wei Ji

Phosphorene, the single layer counterpart of black phosphorus, is a novel two-dimensional semiconductor with high carrier mobility and a large fundamental direct band gap, which has attracted tremendous interest recently. Its potential…

材料科学 · 物理学 2015-02-06 Guangzhao Qin , Qing-Bo Yan , Zhenzhen Qin , Sheng-Ying Yue , Ming Hu , Gang Su

The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that…

材料科学 · 物理学 2008-04-14 J. H. Chen , C. Jang , S. Xiao , M. Ishigami , M. S. Fuhrer

Anisotropic charge carrier transport in black phosphorus limited by ionized impurity scattering at finite temperature is explored theoretically. The anisotropic electronic structure enters the calculation for the polarizability (screening),…

介观与纳米尺度物理 · 物理学 2017-05-03 Yue Liu , P. Paul Ruden

Ideal two-dimensional (2D) semiconductors with high mobility comparable to three-dimensional (3D) Si or GaAs are still lacking, hindering the development of high-performance 2D devices. Here in this work, using first-principles calculations…

材料科学 · 物理学 2022-04-26 Shiru Song , Shixu Liu , Yuting Sun , Ji-Hui Yang , Xin-Gao Gong

Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior of multilayers of BP with ferromagnetic tunnel contacts. We…

介观与纳米尺度物理 · 物理学 2014-07-07 M. Venkata Kamalakar , B. N Madhushankar , André Dankert , Saroj P. Dash

Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semi-metallic graphene and wide band gap transition metal dichalcogenides such as…

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find…

介观与纳米尺度物理 · 物理学 2008-05-12 E. H. Hwang , S. Das Sarma

Mobility is a key parameter for SnO2, which is extensively studied as a practical transparent oxide n-type semiconductor. In experiments, the mobility of electrons in bulk SnO2 single crystals varies from 70 to 260 cm2V-1s-1 at room…

材料科学 · 物理学 2022-11-11 Zhen Li , Patrizio Graziosi , Neophytos Neophytou

Black phosphorus (BP), a two-dimensional (2D) van der Waals layered material composed of phosphorus atoms, has been one of the most actively studied 2D materials in recent years due to its tunable energy band gap (tunable even to a negative…

介观与纳米尺度物理 · 物理学 2019-04-08 Sanghyun Park , Seungchan Woo , Hongki Min

The double carrier transport has been observed in thin film black phosphorus (BP) field effect transistor (FET) devices in highly electron doped region. BP thin films with typical thickness of 15 nm were encapsulated by hexagonal boron…

介观与纳米尺度物理 · 物理学 2018-11-08 Kohei Hirose , Toshihito Osada , Kazuhito Uchida , Toshihiro Taen , Kenji Watanabe , Takashi Taniguchi , Yuichi Akahama

The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer…

介观与纳米尺度物理 · 物理学 2014-03-25 Nan Ma , Debdeep Jena

We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor (EDLT) configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of 5*10^3. The band gap was…

材料科学 · 物理学 2015-05-20 Yu Saito , Yoshihiro Iwasa

Black phosphorus (BP) has emerged as a promising candidate for next generation electronics and optoelectronics among the 2D family materials due to its extraordinary electrical/optical/optoelectronic properties. Interestingly, BP shows…

Preceding the current interest in layered materials for electronic applications, research in the 1960's found that black phosphorus combines high carrier mobility with a fundamental band gap. We introduce its counterpart, dubbed few-layer…

介观与纳米尺度物理 · 物理学 2014-04-25 Han Liu , Adam T. Neal , Zhen Zhu , David Tomanek , Peide D. Ye

The intrinsic charge transport of stanene is investigated by using density function theory and density function perturbation theory coupled with Boltzmann transport equations from first principles. The accurate Wannier interpolations are…

化学物理 · 物理学 2018-01-11 Yuma Nakamura , Tianqi Zhao , Jinyang Xi , Wen Shi , Dong Wang , Zhigang Shuai

As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport…

Black phosphorus is emerging as a promising semiconductor for electronic and optoelectronic applications. To study fundamental carrier properties, we performed ultrafast femtosecond pump-probe spectroscopy on thin film black phosphorus…

介观与纳米尺度物理 · 物理学 2017-03-13 Vasudevan Iyer , Peide Ye , Xianfan Xu