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相关论文: Charge Puddles in Graphene Near the Dirac Point

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Graphene on a dielectric substrate exhibits spatial doping inhomogeneities, forming electron-hole puddles. Understanding and controlling the latter is of crucial importance for unraveling many of graphene's fundamental properties at the…

介观与纳米尺度物理 · 物理学 2015-05-27 S. C. Martin , S. Samaddar , B. Sacépé , A. Kimouche , J. Coraux , F. Fuchs , B. Grévin , H. Courtois , C. B. Winkelmann

We characterize the carrier density profile of the ground state of graphene in the presence of particle-particle interaction and random charged impurity for zero gate voltage. We provide detailed analysis on the resulting spatially…

介观与纳米尺度物理 · 物理学 2017-03-15 M. N. Najafi , M. Ghasemi Nezhadhaghighi

When graphene is close to charge neutrality, its energy landscape is highly inhomogeneous, forming a sea of electron-like and hole-like puddles, which determine the properties of graphene at low carrier density. However, the details of the…

介观与纳米尺度物理 · 物理学 2011-12-07 Shaffique Adam , Suyong Jung , Nikolai N. Klimov , Nikolai B. Zhitenev , Joseph A. Stroscio , M. D. Stiles

In an ideal graphene sheet charge carriers behave as two-dimensional (2D) Dirac fermions governed by the quantum mechanics of massless relativistic particles. This has been confirmed by the discovery of a half-integer quantum Hall effect in…

材料科学 · 物理学 2015-05-13 Yuanbo Zhang , Victor W. Brar , Caglar Girit , Alex Zettl , Michael F. Crommie

It is widely believed that carrier-density inhomogeneities ("electron-hole puddles") in single-layer graphene on a substrate like quartz are due to charged impurities located close to the graphene sheet. Here we demonstrate by using a…

介观与纳米尺度物理 · 物理学 2012-05-18 Marco Gibertini , Andrea Tomadin , Francisco Guinea , Mikhail I. Katsnelson , Marco Polini

The electronic density of states of graphene is equivalent to that of relativistic electrons. In the absence of disorder or external doping the Fermi energy lies at the Dirac point where the density of states vanishes. Although transport…

介观与纳米尺度物理 · 物理学 2015-05-13 J. Martin , N. Akerman , G. Ulbricht , T. Lohmann , J. H. Smet , K. von Klitzing , A. Yacoby

We develop a theory of drag in graphene double layers near charge neutrality. We work in the regime of electron hydrodynamics and account for interlayer correlations of charge puddle disorder. The drag resistivity is expressed in terms of…

介观与纳米尺度物理 · 物理学 2025-11-04 Dmitry Zverevich , Alex Levchenko , A. V. Andreev

We investigate the contribution of charge puddles to the non-vanishing conductivity minimum in disordered graphene flakes at the charge neutrality point. For that purpose, we study systems with a geometry that suppresses the transmission…

介观与纳米尺度物理 · 物理学 2016-01-13 Leandro R. F. Lima , Caio H. Lewenkopf

We probe the local inhomogeneities in the electronic properties of exfoliated graphene due to the presence of charged impurities in the SiO2 substrate using a combined scanning tunneling and electrostatic force microscope. Contact potential…

介观与纳米尺度物理 · 物理学 2012-02-21 Andres Castellanos-Gomez , Roel H. M. Smit , Nicolás Agraït , Gabino Rubio-Bollinger

We investigate the effects of charged impurity distributions and carrier-carrier interactions on electronic transport in graphene on SiO$_2$ by employing a self-consistent coupled simulation of carrier transport and electrodynamics. We show…

介观与纳米尺度物理 · 物理学 2014-05-21 N. Sule , S. C. Hagness , I. Knezevic

We theoretically study the transport properties of both monolayer and bilayer graphene in the presence of electron-hole puddles induced by charged impurities which are invariably present in the graphene environment. We calculate the…

介观与纳米尺度物理 · 物理学 2011-09-28 Qiuzi Li , E. H. Hwang , S. Das Sarma

Using scanning tunneling microscopy, we have imaged local charge density fluctuations in monolayer graphene. By placing a small gold nanoparticle on the end of the STM tip, a charge sensor is created. By raster scanning the tip over the…

介观与纳米尺度物理 · 物理学 2015-03-17 A. Deshpande , W. Bao , H. Zhang , Z. Zhao , C. N. Lau , B. J. LeRoy

In this paper the mono-layer graphene at the charge neutrality point is considered whithin Thomas-Fermi-Dirac theory, treating inhomogeneous external potentials and electron-electron interactions on equal footing. We present some general…

统计力学 · 物理学 2016-09-26 M. N. Najafi , M. Ghasemi Nezhadhaghighi

We consider a graphene sheet in the vicinity of a substrate, which contains charged impurities. An analytic expression for the probability distribution function of voltage fluctuations due to the charged impurities is derived. The…

介观与纳米尺度物理 · 物理学 2008-01-14 Victor Galitski , Shaffique Adam , S. Das Sarma

The statistical properties of the carrier density profile of graphene in the ground state in the presence particle-particle interaction and random charged impurity in zero gate voltage has been recently obtained by Najafi \textit{et al.}…

统计力学 · 物理学 2018-07-18 M. N. Najafi , N. Ahadpour , J. Cheraghalizadeh , H. Dashti-Naserabadi

The specifics of charge screening and electrostatic potential spatial distribution in multilayered graphene films placed in between charged substrates is theoretically analyzed. It is shown that by varying the areal charge densities on the…

介观与纳米尺度物理 · 物理学 2014-03-21 Natalya A. Zimbovskaya , Eugene J. Mele

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the…

材料科学 · 物理学 2009-06-10 J. -H. Chen , C. Jang , M. Ishigami , S. Xiao , E. D. Williams , M. S. Fuhrer

The electrical potential on the surface of $\sim 300$ nm thick SiO$_2$ grown on single crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential…

材料科学 · 物理学 2015-05-13 N. García , Zang Yan , A. Ballestar , J. Barzola-Quiquia , F. Bern , P. Esquinazi

Charge carriers in a graphene sheet, a single layer of graphite, exhibit much distinctive characteristics to those in other two-dimensional electronic systems because of their chiral nature. In this report, we focus on the observation of…

介观与纳米尺度物理 · 物理学 2012-05-28 Dong-Keun Ki , Dongchan Jeong , Jae-Hyun Choi , Kee-Su Park , Hu-Jong Lee

Understanding disorder in graphene is essential for electronic applications; in contrast to conventional materials, the extraordinarily low electron-phonon scattering1, 2 in graphene implies that disorder3-7 dominates its resistivity even…

介观与纳米尺度物理 · 物理学 2011-11-14 Jun Yan , Michael S. Fuhrer
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