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相关论文: Charge Puddles in Graphene Near the Dirac Point

200 篇论文

The ground-state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and…

介观与纳米尺度物理 · 物理学 2009-12-02 M. M. Fogler

The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical…

介观与纳米尺度物理 · 物理学 2008-10-02 Xu Du , Ivan Skachko , Anthony Barker , Eva Y. Andrei

We have carried out scanning tunneling spectroscopy measurements on exfoliated monolayer graphene on SiO$_2$ to probe the correlation between its electronic and structural properties. Maps of the local density of states are characterized by…

介观与纳米尺度物理 · 物理学 2009-05-19 A. Deshpande , W. Bao , F. Miao , C. N. Lau , B. J. LeRoy

Disordered Fermi-Dirac distributions are used to model, within a straightforward and essentially phenomenological Boltzmann equation approach, the electron/hole transport across graphene puddles. We establish, with striking experimental…

介观与纳米尺度物理 · 物理学 2015-05-30 L. Moriconi , D. Niemeyer

Graphene -a recently discovered one-atom-thick layer of graphite- constitutes a new model system in condensed matter physics, because it is the first material in which charge carriers behave as massless chiral relativistic particles. The…

Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…

介观与纳米尺度物理 · 物理学 2007-10-09 E. H. Hwang , S. Adam , S. Das Sarma

Graphene as well as more generally Dirac solids constitute two dimensional materials where the electronic flow is ultra relativistic. When a Dirac solid is deposited on a different substrate surface with roughness, a local random potential…

介观与纳米尺度物理 · 物理学 2018-08-01 Marios Mattheakis , G. P. Tsironis , Efthimios Kaxiras

We study the effect of long-range disorder created by charge impurities on the carrier density distribution of graphene-based heterostructures. We consider heterostructures formed by two graphenic sheets (either single layer graphene, SLG,…

介观与纳米尺度物理 · 物理学 2014-07-10 Martin Rodriguez-Vega , Jonathan Fischer , S. Das Sarma , E. Rossi

Single-layer graphene sheets are typically characterized by long-wavelength corrugations (ripples) which can be shown to be at the origin of rather strong potentials with both scalar and vector components. We present an extensive…

介观与纳米尺度物理 · 物理学 2010-04-06 Marco Gibertini , Andrea Tomadin , Marco Polini , A. Fasolino , M. I. Katsnelson

We theoretically consider, comparing with the existing experimental literature, the electrical conductivity of gated monolayer graphene as a function of carrier density, temperature, and disorder in order to assess the prospects of…

介观与纳米尺度物理 · 物理学 2013-01-28 S. Das Sarma , E. H. Hwang

It is demonstrated that a new nodal point is forming and a domain with anomalous dispersion is unfolding in the spectrum of charge carriers in graphene, when the concentration of weakly bound impurities exceeds a certain critical value.

无序系统与神经网络 · 物理学 2011-09-13 Yuriy V. Skrypnyk , Vadim M. Loktev

Thermodynamics coupled with quantum features on electron and hole dynamics in Dirac materials is quite interesting and crucial for real device applications. The correlation between the formation of electron-hole puddles in nearer to the…

介观与纳米尺度物理 · 物理学 2026-02-27 Karuppuchamy Navamani

We investigate the conductivity of doped graphene in the semiclassical Boltzmann limit, as well as the conductivity minimum within the self-consistent transport theory. Using the hard-disk model for a two-dimensional distribution of…

材料科学 · 物理学 2013-11-21 Rastko Aničić , Zoran L. Mišković

Epitaxial graphene, grown on SiC(0001) surface, has been widely studied both experimentally and theoretically. It was found that first epitaxial graphene layer in such structures is a buffer layer i.e. there are no characteristic Dirac…

材料科学 · 物理学 2015-03-13 Jakub Soltys , Jacek Piechota , Michal Lopuszynski , Stanislaw Krukowski

We investigated proximity-induced superconductivity in a graphene-insulating InO bilayer system through gate-controlled transport measurements. Distinct oscillations in the differential conductance are observed across both the electron and…

超导电性 · 物理学 2025-04-08 Yuxiao Wu , Udit Khanna , Eyal Walach , Efrat Shimshoni , Aviad Frydman

We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with…

We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged…

介观与纳米尺度物理 · 物理学 2011-10-06 Qiuzi Li , E. H. Hwang , E. Rossi , S. Das Sarma

We report a thermoelectric study of graphene in both zero and applied magnetic fields. As a direct consequence of the linear dispersion of massless particles, we find that the Seebeck coefficient Sxx diverges with 1 /, where n2D is the…

介观与纳米尺度物理 · 物理学 2015-05-13 Peng Wei , Wenzhong Bao , Yong Pu , Chun Ning Lau , Jing Shi

Since the experimental realization of graphene1, extensive theoretical work has focused on short-range disorder2-5, ''ripples''6, 7, or charged impurities2, 3, 8-13 to explain the conductivity as a function of carrier density…

其他凝聚态物理 · 物理学 2009-11-13 J. H. Chen , C. Jang , M. S. Fuhrer , E. D. Williams , M. Ishigami

We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin,…

介观与纳米尺度物理 · 物理学 2010-04-21 S. Das Sarma , E. H. Hwang , E. Rossi