相关论文: Effect of interface geometry on electron tunnellin…

The hole doped Si(111)(2root3x2root3)R30(degrees)-Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunneling into the empty surface-state bands. No such transition…

Stacks of a few intrinsic tunnel junctions were micro-fabricated on the surface of Bi-2212 single crystals. The number of junctions in a stack was tailored by progressively increasing the height of the stack by ion-beam etching, while its…

In this paper, a theoretical approach, comprising the non-equilibrium Green's function method for electronic transport and Landau-Khalatnikov equation for electric polarization dynamics, is presented to describe polarization-dependent…

The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility…

Quantitative description of charge transport across tunneling and break-junction devices with novel superconductors encounters some problems not present, or not as severe for traditional superconducting materials. In this work, we explain…

2D electron gases (2DEGs) formed at oxide interfaces provide a rich testbed for fundamental physics and device applications. While the discussion of the physical origins of this phenomenon continues, the recent discovery of oxide 2DEGs at…

We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale…

The observation of a two dimensional electron gas (2DEG) (1, 2), superconductivity (3, 4), magnetic effects (5) and electronic phase separation (6-8) at the interfaces of insulating oxides, especially LaAlO3/SrTiO3, has further enhanced the…

The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any…

We demonstrate that at the usual 1E-7 torr range of base pressures in the sputtering chamber, X-ray photoelectron spectroscopy shows the existence of a thin AlOx layer at the Nb/Al interface in both Nb/Al-AlOx/Pb tunnel junctions and Nb/Al…

Planar tunneling junctions of the presumably unconventional superconductor FeSe were prepared and investigated. The junctions consisted of FeSe/AlOx/Ag multilayers patterned lithographically into mesa structures. Bias voltage dependent…

Heterostructures increasingly attracted attention over the past several years to enable various optoelectronic and photonic applications. In this work, atomically thin interfaces of Ir/Al2O3 heterostructures compatible with…

We present the concept and the results of pilot measurements of tunneling in a system {Al/$\delta_{Si}$-GaAs} under pressure up to 2 GPa at 4.2 K. The obtained results may indicate the following: the barrier height for {Al/$\delta$-GaAs}…

Transition metal dichalcogenides (TMDCs), with their two-dimensional structures and sizable bandgaps, are good candidates for barrier materials in tunneling field-effect transistor (TFET) formed from atomic precision vertical stacks of…

The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces…

By imposing the constraints of structural compatibility, stability and a large tunneling magneto-resistance, we have identified the Fe$_3$Al/BiF$_3$/Fe$_3$Al stack as a possible alternative to the well-established FeCoB/MgO/FeCoB in the…

Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the…

We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the ZnO:Al films by two orders of magnitude but the Schottky…

Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains…

The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…