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相关论文: Effect of interface geometry on electron tunnellin…

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We have applied the Numerical Renormalization Group method to study a mesoscopic system consisting of two samples of metal separated by an insulating barrier, with nanometer dimensions, which allows the tunnelling of a single electron from…

介观与纳米尺度物理 · 物理学 2007-05-23 H. O. Frota

Hydrogen contamination in Josephson junctions is a potential source of device-to-device variability and two-level-system loss in superconducting qubits. In this work, we investigate hydrogen incorporation in oxidized aluminum barriers by…

量子物理 · 物理学 2026-05-26 Yu Zhu , Aldilene Saraiva-Souza , Félix Beaudoin , Hong Guo

Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction…

介观与纳米尺度物理 · 物理学 2015-02-17 Song-Lin Li , K. Komatsu , Shu Nakaharai , Yen-Fu Lin , M. Yamamoto , X. F. Duan , K. Tsukagoshi

Magnetic Tunnel Junctions whose basic element consists of two ferromagnetic electrodes separated by an insulating non-magnetic barrier have become intensely studied and used in non-volatile spintronic devices. Since ballistic tunnel of…

In contrast to silicon-based transistors, single molecule junctions can be gated by simple mechanical means. Specifically, charge can be transferred between the junction's electrodes and its molecular bridge when the interelectrode distance…

介观与纳米尺度物理 · 物理学 2023-05-24 Biswajit Pabi , Jakub Šebesta , Richard Korytár , Oren Tal , Atindra Nath Pal

Herein, we reported giant tunability of the physical properties of 2DEGs at the spinel/perovskite interface of {\gamma}-Al2O3/SrTiO3 (GAO/STO). By modulating the carrier density thus the band filling with ionic-liquid gating, the system…

At low temperatures, the transport through a superconducting-normal tunnel interface is due to tunneling of electrons in pairs. The probability for this process is shown to depend on the layout of the electrodes near the tunnel junction,…

凝聚态物理 · 物理学 2009-10-22 F. W. J. Hekking , Yu. V. Nazarov

At low temperatures and voltages tunneling transport through an interface between a superconductor and hopping insulator is dominated by coherent two-electron tunneling between the Cooper-pair condensate and pairs of localized states, see…

其他凝聚态物理 · 物理学 2009-11-11 M. Kirkengen , J. Bergli , Y. M. Galperin

In this review, we discuss the impact of interfaces and heterojuctions on the electronic and thermoelectric transport properties of materials. We review recent progress in understanding electronic transport in two-dimensional (2D) materials…

介观与纳米尺度物理 · 物理学 2019-10-02 Arnab K. Majee , Adithya Kommini , Zlatan Aksamija

We study in detail, by experimental measurements, atomistic simulations and DFT transport calculations, the process of formation and the resulting electronic properties of atomic-sized contacts made of Au, Ag and Cu. Our novel approaches to…

介观与纳米尺度物理 · 物理学 2018-02-21 C. Sabater , W. Dednam , M. R. Calvo , M. A. Fern/'andez , C. Untiedt , M. J. Caturla

We theoretically study the electron transport properties in a ferromagnetic/normal/ferromagnetic tunnel junction, which is deposited on the top of a topological surface. The conductance at the parallel (\textbf{P}) configuration can be much…

介观与纳米尺度物理 · 物理学 2013-05-03 Jian-Hui Yuan , Yan Zhang , Jian-Jun Zhang , Ze Cheng

A detailed computational analysis has been performed, considering copper atomic contacts that are exposed directly to water molecules, hydroxyl groups, and monatomic as well as molecular hydrogen and oxygen species. The optimized physical…

化学物理 · 物理学 2020-02-28 Firuz Demir , Kevin Dean , George Kirczenow

In this paper, density functional theory calculations are used to explore the electronic and atomic reconstruction at interfaces between III-III/I-V oxides. In particular, at these interfaces, two dimensional electron gases (2DEGs) with…

材料科学 · 物理学 2012-06-06 Valentino R. Cooper

We examine theoretically coherent electron transport through the single-molecule magnet Mn$_{12}$, bridged between Au(111) electrodes, using the non-equilibrium Green's function method and the density-functional theory. We analyze the…

介观与纳米尺度物理 · 物理学 2015-05-18 Kyungwha Park , Salvador Barraza-Lopez , Victor M. Garcia-Suarez , Jaime Ferrer

This letter presents experiments on junctions fabricated by a new technique that enables the use of high quality aluminum oxide tunnel barriers with normal metal electrodes at low temperatures. Inverse proximity effect is applied to…

介观与纳米尺度物理 · 物理学 2013-03-27 J. V. Koski , J. T. Peltonen , M. Meschke , J. P. Pekola

The effect of monolayers of oxygen (O) and hydrogen (H) on the possibility of material transfer at aluminium/titanium nitride (Al/TiN) and copper/diamond (Cu/C$_{\text{dia}}$) interfaces, respectively, were investigated within the framework…

We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…

介观与纳米尺度物理 · 物理学 2007-05-23 A. A. Shashkin , V. T. Dolgopolov , E. V. Deviatov , B. Irmer , A. G. C. Haubrich , J. P. Kotthaus , M. Bichler , W. Wegscheider

Several experiments reveal the inhomogeneous character of the superconducting state that occurs when the carrier density of the two-dimensional electron gas formed at the LaXO3/SrTiO3 (X=Al or Ti) interface is tuned above a threshold value…

介观与纳米尺度物理 · 物理学 2015-02-27 S. Caprara , D. Bucheli , N. Scopigno , N. Bergeal , J. Biscaras , S. Hurand , J. Lesueur , M. Grilli

Emergent phases in the two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides have attracted great attention in the past decade. We present ab-initio electronic structure calculations for the interface…

材料科学 · 物理学 2015-12-24 Hrishit Banerjee , Sumilan Banerjee , Mohit Randeria , Tanusri Saha-Dasgupta

We investigate tunneling in metal-insulator-metal junctions employing few atomic layers of hexagonal boron nitride (hBN) as the insulating barrier. While the low-bias tunnel resistance increases nearly exponentially with barrier thickness,…

介观与纳米尺度物理 · 物理学 2019-03-26 U. Chandni , K. Watanabe , T. Taniguchi , J. P. Eisenstein