相关论文: Effect of interface geometry on electron tunnellin…
We report scanning tunneling microscopy and ballistic electron emission microscopy studies of the electronic states of the uncovered and chemisorbed-oxygen covered surface of AlOx tunnel barrier layers. These states change when chemisorbed…
The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel gamma-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to…
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$ as a potentially better…
Interfaces have long been known to be the key to many mechanical and electric properties. To nickel base superalloys which have perfect creep and fatigue properties and have been widely used as materials of turbine blades, interfaces…
We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport…
This work is concerned with Al/Al-oxide(AlO$_{x}$)/Al-layer systems which are important for Josephson-junction-based superconducting devices such as quantum bits. The device performance is limited by noise, which has been to a large degree…
We examine the effect of an FET geometry on the charge ordering phase diagram of transition metal oxides using numerical simulations of a semiclassical model including long-range Coulomb fields, resulting in nanoscale pattern formation. We…
Currently, molecular tunnel junctions are recognized as important active elements of various nanodevices. This gives a strong motivation to study physical mechanisms controlling electron transport through molecules. Electron motion through…
We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing…
Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer…
Polar discontinuities occurring at interfaces between two different materials constitute both a challenge and an opportunity in the study and application of a variety of devices. In order to cure the large electric field occurring in such…
Molecules adsorbing on metal surfaces form a variety of different surface polymorphs. How strongly this polymorphism affects interface properties is a priori unknown. In this work we investigate how strongly the surface polymorphism…
Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device…
We present an atomistic self-consistent tight-binding study of the electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube channel length when the end of the nanotube wire is…
We examine theoretically the effects of the bonding geometries at the gold-thiol interfaces on the inelastic tunneling spectra of propanedithiolate (PDT) molecules bridging gold electrodes and show that inelastic tunneling spectroscopy…
Despite many similarities between electronics and optics, the hopping of the electron on a discrete atomic lattice gives rise to energy band nonparabolicity and anisotropy. The crucial influences of this effect on material properties and…
Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e. junctions with resistances comparable to, or less than, the quantum resistance $R_{\rm q}\equiv h/e^2\approx 25.8$ k$\Omega$) have been studied experimentally and…
Magnetic tunnel junction (MTJ) is the key component to enable information access and increasing number of MTJs is integrated to develop high-density spintronic devices. However, continuous miniaturization of the conventional MTJs is…
We investigate the effect of the laser parameters of pulsed laser deposition on the film stoichiometry and electronic properties of LaAlO_3/SrTiO_3 (001) heterostructures. The La/Al ratio in the LaAlO_3 films was varied over a wide range…
We report the electrical transport in vertical Josephson tunnel junctions (area 400 $\mu m$$^2$) using GdBa$_2$Cu$_3$O$_7$$_{-\delta}$ electrodes and SrTiO$_3$ as an insulating barrier (with thicknesses between 1 nm and 4 nm). The results…