相关论文: Band bending at interfaces between topological ins…
Topological insulators (TIs) are materials with an insulating bulk characterized by a gapped band structure, along with gapless metallic surface states having a Dirac cone with a helical spin structure in momentum space. The helical…
The characteristics of topological insulators are manifested in both their surface and bulk properties, but the latter remain to be explored. Here we report bulk signatures of pressure-induced band inversion and topological phase…
We have studied the electron transport properties of topological insulator-related material Bi2Se3 near the superconducting Pb-Bi2Se3 interface, and found that a superconducting state is induced over an extended volume in Bi2Se3. This state…
Spin-orbit coupled materials have attracted revived prominent research interest as of late, especially due their direct connection with topological notions. Arguably, a hallmark of this pursuit is formed by the concept of the topological…
Homojunctions between Bi$_2$Se$_3$ and its Mn-doped phase are investigated as a sample geometry to study the influence of spin degrees of freedom on topological insulator properties. $n$ quintuple layers (QLs) of Bi$_2$Se$_3$ are grown…
The ability to fine-tune band gap and band inversion in topological materials is highly desirable for the development of novel functional devices. Here we propose that the electronic properties of a free-standing nanomembrane of topological…
Bi2Se3, Bi2Te3 and Sb2Te3 compounds are recently predicted to be 3-dimentional (3D) strong topological insulators. In this paper, based on ab-initio calculations, we study in detail the topological nature and the surface states of this…
Detailed study of the LDOS associated with the surface-state-band near a step-edge of the strong topological-insulator Bi2Te3, reveal a one-dimensional bound state that runs parallel to the stepedge and is bound to it at some characteristic…
The interface between a superconductor and a topological insulator has been proposed to harbor novel quasiparticles that realize physical schemes for fault-tolerant quantum computation. Here, we present high resolution angle-resolved…
Recent discoveries have spurred the theoretical prediction and experimental realization of novel materials that have topological properties arising from band inversion. Such topological insulators are insulating in the bulk but have…
We have investigated the band structure at the $\Gamma$ point of the three-dimensional (3D) topological insulator Bi$_2$Se$_3$ using magneto-spectroscopy over a wide range of energies ($0.55-2.2$\,eV) and in ultrahigh magnetic fields up to…
We outline here how strong light-matter interaction can be used to induce quantum phase transition between normal and topological phases in two-dimensional topological insulators. We consider the case of a HgTe quantum well, in which band…
Pb$_{0.77}$Sn$_{0.23}$Se is a novel alloy of two promising thermoelectric materials PbSe and SnSe that exhibits a temperature dependent band inversion below 300 K. Recent work has shown that this band inversion also coincides with a trivial…
Raman scattering [K. M. F. Shahil et al., Appl. Phys. Lett. 96, 153103 (2010), V. Gnezdilov et al., Phys. Rev. B 84, 195118 (2011) and H. H. Kung et al., Phys. Rev. B 95, 245406 (2017)], inelastic helium scattering [X. Zhu et al., Phys.…
In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating, should not provide any electric coupling between the two metallic surfaces. However, transport studies on existing TI films show that the…
Detection and manipulation of electrons' spins are key prerequisites for spin-based electronics or spintronics. This is usually achieved by contacting ferromagnets with metals or semiconductors, in which the relaxation of spins due to…
Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…
A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states…
The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface…
The criteria for strong correlations on surfaces of three-dimensional topological insulators are discussed. Usually, the Coulomb repulsion at such surfaces is too weak for driving a phase transition to a strongly correlated regime. I…