相关论文: Band bending at interfaces between topological ins…
We present a theoretical study of dispersion of states which form the bulk band-gap edges in the three-dimensional topological insulator Bi2Te3. Within density functional theory, we analyze the effect of atomic positions varying within the…
Topological insulators are new states of quantum matter which can not be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states…
The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially…
Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi level naturally resides in the conduction band due to…
Thermoelectric properties in topological insulator Bi2Se3 are explored with multifaceted strategies, i.e., hybrid functional with strain and artificial intelligence methodology. The assessment with the experimental band gap values…
A topological insulator is a new state of matter, possessing gapless spin-locking surface states across the bulk band gap which has created new opportunities from novel electronics to energy conversion. However, the large concentration of…
Surface states of three-dimensional topological insulators exhibit the phenomenon of spin-momentum locking, whereby the orientation of an electron spin is determined by its momentum. Probing the spin texture of these states is of critical…
The combination of magnetism and topological properties in one material platform is attracting significant attention due to the potential of realizing low power consumption and error-robust electronic devices. Common practice is to start…
Based on first principles calculations, we predicate that Bi on a graphene derivate, $g$-C$_{14}$N$_3$, which involves a $3\times 3$ unit cell of graphene with four C atoms substituted by three N atoms, is a topological insulator with a gap…
Topologically nontrivial materials host protected edge states associated with the bulk band inversion through the bulk-edge correspondence. Manipulating such edge states is highly desired for developing new functions and devices practically…
We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling…
Topological insulators (TI) are materials having an energy band gap in the bulk and conducting helical electronic states on the surface. The helical states are protected by time reversal symmetry thus are expected to be robust against…
We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the recently discovered 3D topological insulator Bi1-xSbx [D. Hsieh et al., Nature 452, 970 (2008)]. By modulating the…
Understanding the physical and chemical processes at the interface of metals and topological insulators is crucial for developing the next generation of topological quantum devices. Here we report the discovery of robust superconductivity…
A band gap for electronic states in crystals governs various properties of solids, such as transport, optical and magnetic properties. Its estimation and control have been an important issue in solid state physics. The band gap can be…
In an ideal bulk topological-insulator (TI) conducting surface states protected by time reversal symmetry enfold an insulating crystal. However, the archetypical TI, Bi2Se3, is actually never insulating; it is in fact a relatively good…
Recent theory and experiment have revealed that strong spin-orbit coupling can have dramatic qualitative effects on the band structure of weakly interacting solids. Indeed, it leads to a distinct phase of matter, the topological band…
Functional manipulation of graphene is an important topic in view of both fundamental researches and practical applications. In this study, we show that intercalation of 5$d$ transition metals in epitaxial graphene on SiC is a promising…
Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the…
Quantum spin Hall insulators, or synonymously known as 2D topological insulators, are crucial 2D systems hosting topologically protected edge states. The working temperature of this topological quantum phase is dictated by the inverted…