相关论文: InAs nanowire transistors with multiple, independe…
Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable…
Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers…
We have previously discussed the design of a neutral atom quantum computer with an on-demand interaction [E. Hosseini Lapasar, et al., J. Phys. Soc. Jpn. 80, 114003 (2011)]. In this contribution, we propose an experimental method to…
The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit…
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of…
Nanomechanical circuits for transverse acoustic waves promise to enable new approaches to computing, precision biochemical sensing and many other applications. However, progress is hampered by the lack of precise control of the coupling…
We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to…
Perfectly vertical grating couplers leveraging metamaterials can achieve both high coupling efficiency and minimal back reflection. The fabricability of these designs, with segmentations in both the longitudinal and transverse dimensions,…
Inspired by the challenge of scaling up existing silicon quantum hardware, we investigate compilation strategies for sparsely-connected 2d qubit arrangements and propose a spin-qubit architecture with minimal compilation overhead. Our…
Efficient light coupling into integrated photonic devices is of key importance to a wide variety of applications. "Inverse nanotapers" are widely used, in which the waveguide width is reduced to match an incident mode. Here, we demonstrate…
We demonstrate how using two-qubit composite rotations a high fidelity controlled-NOT (CNOT) gate can be constructed, even when the strength of the interaction between qubits is not accurately known. We focus on the exchange interaction…
Ternary quantum information processing in superconducting devices poses a promising alternative to its more popular binary counterpart through larger, more connected computational spaces and proposed advantages in quantum simulation and…
The superconducting proximity effect has been the focus of significant research efforts over many years and has recently attracted renewed interest as the basis of topologically non-trivial states in materials with a large spin orbit…
We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling…
We provide an explicit construction of a universal gate set for continuous-variable quantum computation with microwave circuits. Such a universal set has been first proposed in quantum-optical setups, but its experimental implementation has…
We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap…
Two qubit gates constitute fundamental building blocks in the realization of large-scale quantum devices. Using superconducting circuits, two-qubit gates have previously been implemented in different ways with each method aiming to maximize…
Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…
We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale…
The discovery of three-dimensional (3D) topological insulators opens a gateway to generate unusual phases and particles made of the helical surface electrons, proposing new applications using unusual spin nature. Demonstration of the…