相关论文: InAs nanowire transistors with multiple, independe…
We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique…
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…
Single-electron transistors would represent an approach for less power consuming microelectronic devices if room-temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small,…
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire…
The three-spin-$1/2$ decoherence-free subsystem defines a logical qubit protected from collective noise and supports exchange-only universal gates. Such logical qubits are well-suited for implementation with electrically-defined quantum…
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching…
A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in…
Electronically phase separated manganite wires are found to exhibit controllable metal-insulator transitions under local electric fields. The switching characteristics are shown to be fully reversible, polarity independent, and highly…
InAs/GaSb double quantum wells (QWs) separated by a 100 \AA\ AlSb middle barrier are grown by molecular beam epitaxy. We report a nanofabrication technique that utilizes the surface Fermi level pinning position in InAs $[E_f^s(\rm InAs)]$…
Nanophotonics has emerged as a powerful tool for manipulating light on chips. Almost all of today's devices, however, have been designed using slow and ineffective brute-force search methods, leading in many cases to limited device…
Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature with a laser scribing process. The neuron transistors are composed of a bottom ITO floating gate and multiples of two…
Two-dimensional (2D) semiconductors have emerged as leading candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier…
Narrow bandgap InAs$_{1-x}$Sb$_x$ nanowires show broad prospects for applications in wide spectrum infrared detectors, high-performance transistors and quantum computation. Realizing such applications require the fine control of composition…
High-fidelity and robust quantum manipulation is the key for scalable quantum computation. Therefore, due to the intrinsic operational robustness, quantum manipulation induced by geometric phases is one of the promising candidates. However,…
High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that…
Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computation schemes. It is however technically difficult to both…
Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…
Interest in hybrid electronic devices for quantum science is driving the research into superconductor-semiconductor materials combinations. Here we study InAs nanowires coated with shells of $\beta$-Sn. The wires grow via the…
Accurate, nontrivial quantum operations on many qubits are experimentally challenging. As opposed to the standard approach of compiling larger unitaries into sequences of 2-qubit gates, we propose a protocol on Hamiltonian control fields…
Nanomechanical systems have been proposed as an alternative computing platform for high radiation environments, where semiconductor electronics traditionally fail, as well as to allow improved gate densities and energy consumption. While…