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相关论文: Tuning the electronic structure of Sr2IrO4 thin fi…

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High-quality Sb2Te3 films are obtained by molecular beam epitaxy on graphene substrate and investigated by in situ scanning tunneling microscopy/spectroscopy. Intrinsic defects responsible for the natural p-type conductivity of Sb2Te3 are…

材料科学 · 物理学 2012-02-14 Yeping Jiang , Y. Y. Sun , Mu Chen , Yilin Wang , Zhi Li , Canli Song , Ke He , Lili Wang , Xi Chen , Qi-Kun Xue , Xucun Ma , S. B. Zhang

Detailed doping dependence of the electronic specific heat coefficient gamma is studied for La2-xSrxCuO4 (LSCO) single crystals in the slightly-doped regime. We find that gamma systematically increases with doping, and furthermore, even for…

超导电性 · 物理学 2010-04-21 Seiki Komiya , I. Tsukada

We use real-time reflection high energy electron diffraction intensity oscillation to establish the Te-rich growth dynamics of topological insulator thin films of Bi2Te3 on Si(111) substrate by molecular beam epitaxy. In situ angle resolved…

Bismuth selenide (Bi2Se3) is a good topological insulator (TI) with its surface band Dirac point inside the bulk bandgap. However, Bi2Se3 films grown by molecular beam epitaxy (MBE) often require tuning of Fermi level near the Dirac point…

介观与纳米尺度物理 · 物理学 2025-09-11 Shu-Wei Wang , Hang Chi , Jui-Che Chung

Substrate engineering provides an opportunity to modulate the physical properties of quantum materials in thin film form. Here we report that TiSe$_2$ thin films grown on TiO$_2$ have unexpectedly large electron doping that suppresses the…

In this study, high-quality thin films of the topological semimetal phase NiTe$_2$ were prepared using molecular beam epitaxy (MBE) technique, confirmed through X-ray diffraction with pronounced Laue oscillations. Electrical transport…

Electronic structure has been studied in lightly electron doped correlated spin-orbit insulator Sr$_2$IrO$_4$ by angle-resolved photoelectron spectroscopy. We have observed coexistence of the lower Hubbard band and the in-gap band, the…

We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for x from 0 to 1 prepared by molecular beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy…

We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structures as a function of lattice-strains. Under tensile (compressive) strains, increased (decreased) Ir-O-Ir bond-angles are expected to…

强关联电子 · 物理学 2013-09-09 J. Nichols , J. Terzic , E. G. Bittle , O. B. Korneta , L. E. De Long , J. W. Brill , G. Cao , S. S. A. Seo

Lightly-doped La$_{2-x}$Sr$_x$CuO$_4$ in the so-called "insulating" spin-glass/diagonal-stripe phase has been studied by angle-resolved photoemission spectroscopy. A quasi-particle (QP) peak crossing the Fermi level has been observed in the…

The techniques of growing films with different parameters in single process make it possible to build up a sample library promptly. In this work, with a precisely controlled moving mask, we synthetized superconducting…

超导电性 · 物理学 2017-06-22 Heshan Yu , Jie Yuan , Beiyi Zhu , Kui Jin

A non-equilibrium phase (Sr1-xLax)Fe2As2 was formed by epitaxial film-growth. The resulting films emerged superconductivity along with suppression of the resistivity anomaly that is associated with magnetic and structural phase transitions.…

超导电性 · 物理学 2013-02-05 Hidenori Hiramatsu , Takayoshi Katase , Toshio Kamiya , Hideo Hosono

A systematic LSDA+U study of doping effects on the electronic and structural properties of single layer CoO2 is presented. Undoped CoO2 is a charge transfer insulator within LSDA+U and a metal with a high density of states (DOS) at the…

超导电性 · 物理学 2007-05-23 Peihong Zhang , Weidong Luo , Vincent H. Crespi , Marvin L. Cohen , Steven G. Louie

Application of a significantly large bias voltage to small Bi2Sr2CaCu2O8+x mesa structures leads to persistent doping of the mesas. Here we employ this effect for analysis of the doping dependence of the electronic spectra of Bi-2212 single…

We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for…

We report on a systematic study of the temperature-dependent Hall coefficient and thermoelectric power in ultra-thin metallic LaNiO$_3$ films that reveal a strain-induced, self-doping carrier transition that is inaccessible in the bulk. As…

强关联电子 · 物理学 2012-04-11 E. J. Moon , J. M. Rondinelli , N. Prasai , B. A. Gray , M. Kareev , J. Chakhalian , J. L. Cohn

In bulk Sr$_{2}$RuO$_{4}$, the strong sensitivity of the superconducting transition temperature $T_{\text{c}}$ to nonmagnetic impurities provides robust evidence for a superconducting order parameter that changes sign around the Fermi…

Electron doping of a 122-type iron pnictide BaFe2As2 by substituting the Ba site with an aliovalent ion (indirect doping), which had been unsuccessful by conventional solid-state synthesis methods, was achieved by a non-equilibrium film…

超导电性 · 物理学 2012-05-01 Takayoshi Katase , Soshi Iimura , Hidenori Hiramatsu , Toshio Kamiya , Hideo Hosono

We investigated chemical pressure effects in electron-doped (e-doped) FeSe by fabricating an electric-double-layer structure with single crystalline FeSe films on LaAlO$_3$ with Se substituted by isovalent Te and S. Our method enables…

超导电性 · 物理学 2021-09-22 N. Shikama , Y. Sakishita , F. Nabeshima , A. Maeda

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer…