相关论文: Atomic origin of high temperature electron trappin…
The electronic properties of cuprate high temperature superconductors in their normal state are very two-dimensional: while transport in the ab plane is perfectly metallic, it is insulating along the c-axis, with ratios between the two…
We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of…
A failure of chips in a huge amount of modern electronic devices is connected as a rule with the undesirable capturing of charge (electrons and holes) by traps in a thin insulating film of silicon oxide in transistors. It leads to a…
Microfabricated ion-trap devices offer a promising pathway towards scalable quantum computing. Research efforts have begun to focus on the engineering challenges associated with developing large-scale ion-trap arrays and networks. However,…
The paper considers methods of particle cooling mostly concentrating on cooling of high energy heavy particles in the high energy colliders. Presently, there are two major methods of the cooling the electron cooling and stochastic cooling.…
Mo$_8$O$_{23}$ is a low-dimensional chemically robust transition metal oxide coming from a prospective family of functional materials, MoO$_{3-x}$, ranging from a wide gap insulator $(x=0)$ to a metal $(x=1)$. The large number of…
Beyond a critical disorder, two-dimensional (2D) superconductors become insulating. In this Superconductor-Insulator Transition (SIT), the nature of the insulator is still controversial. Here, we present an extensive experimental study on…
Semiconductor qubit devices suffer from the drift of important device parameters as they are operated. The most important example is a shift in qubit operating frequencies. This effect appears to be directly related to the heating of the…
Recently discovered modulations of Shubnikov-de Haas oscillations in microwave-irradiated two-dimensional electron systems are shown to arise from electron heating induced by the radiation. The electron temperature, obtained by balancing…
Nonradiative processes limit optoelectronic functionality of nanocrystals and curb their device performance. Nevertheless, the dynamic structural origins of nonradiative relaxations in nanocrystals are not understood. Here, femtosecond…
To study the influence of microwave irradiation on two-dimensional electrons, we apply a method based on capacitance measurements in GaAs quantum well samples where the gate covers a central part of the layer. We find that the capacitance…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The…
We report investigations of the optical properties of the narrow gap semiconductor FeSb2 in comparison with the structural homolog RuSb2. In the infrared region the latter shows insulating behavior in whole investigated temperature range…
We calculated the optical excitation and thermal ionization energies of oxygen vacancies in m-HfO$_2$ using atomic basis sets, a non-local density functional and periodic supercell. The thermal ionization energies of negatively charged…
We show theoretically that a superconducting critical temperature can be effectively increased in a high-entropy mixture of electrons belonging to conduction and valence bands. In order to employ the entropy of mixing into the…
We predict that conduction electrons in a semiconductor film containing a centered square array of metal nanowires normal to its plane are bound in quantum states around the central wires, if a positive bias voltage is applied between the…
Laser-cooled atoms that are trapped and optically interfaced with light in nanophotonic waveguides are a powerful platform for fundamental research in quantum optics as well as for applications in quantum communication and quantum…
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at…
Single-phase films of the full Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4eV. The electrical resistivity has a logarithmic temperature dependence up to…