相关论文: Atomic origin of high temperature electron trappin…
We address the problem of overheating of electrons trapped on the liquid helium surface by cyclotron resonance excitation. Previous experiments, suggest that electrons can be heated to temperatures up to 1000K more than three order of…
The behaviors of resistance, magnetoresistance (up to 5 T), and Hall electromotive force (EMF) with varying temperature (from 10 to 300 K) and measuring current (from 10 mkA to 10 mA) are studied for the Si sample with CrSi2…
We theoretically analyze the cooling dynamics of an atom which is tightly trapped inside a high-finesse optical resonator. Cooling is achieved by suitably tailored scattering processes, in which the atomic dipole transition either scatters…
The interaction of an object with its surrounding bath can lead to a coupling between the object's internal degrees of freedom and its center-of-mass motion. This coupling is especially important for nanomechanical oscillators, which are…
We report the thermoelectric transport properties in the orbital-ordered Mott insulating phase of Ca$_2$RuO$_4$ close to and far from equilibrium. Near equilibrium conditions where the temperature gradient is only applied to the sample, an…
Understanding metal-semiconductor interfaces is critical to the advancement of photocatalysis and sub-bandgap solar energy harvesting where sub-bandgap photons can be excited and extracted into the semiconductor. In this work, we compare…
Trapping of hot electron behavior by trap centers located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation. The results of the simulation show that the trap centers are responsible…
We compute the transient dynamics of phonons in contact with high energy "hot" charge carriers in 12 polar and non-polar semiconductors, using a first-principles Boltzmann transport framework. For most materials, we find that the decay in…
The cooling of two-dimensional electrons in silicon-metal-oxide semiconductor field effect transistors is studied experimentally. Cooling to the lattice is found to be more effective than expected from the bulk electron-phonon coupling in…
We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrates. Metal-Oxide-Semiconductor (MOS) devices with these…
A recombination radiation line of electron-hole plasma, observed in electroluminescence spectra of tunneling silicon MOS diodes, has been investigated at the temperature > 300 K. The internal quantum efficiency of the luminescence, equal to…
In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO$_2$. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps…
High-harmonic generation (HHG) is a typical high-order nonlinear optical phenomenon and can be used to probe electronic structures of solids. Here, we investigate the temperature dependence of HHG from Pr_{0.6}Ca_{0.4}MnO_{3} in the range…
The presence of elemental vacancies in materials is inevitable according to statistical thermodynamics, which will decide the chemical and physical properties of the investigated system. However, the controlled manipulation of vacancies for…
Identifying the mechanism of superconductivity in the high-temperature cuprate superconductors is one of the major outstanding problems in physics. We report local measurements of the onset of superconducting pairing in the high-transition…
Floating electrode electrowetting is caused by dc voltage applied to a liquid droplet on the Cytop surface, without electrical connection to the substrate. The effect is caused by the charge separation in the floating electrode. A…
It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time…
Normal operations of electrochemical devices such as solid oxide fuel cells (SOFC), solid oxide electrolyzer cells (SOEC) and lithium ion batteries (LIB) sometimes fail because of unexpected formation of internal phases. These phases…
While heating of a current carrying Ohmic conductors is an obvious consequence of the diffusive nature of the conduction in such systems, current induced cooling has been recently reported in some molecular conduction junctions. In this…
Cooling a mesoscopic mechanical oscillator to its quantum ground state is elementary for the preparation and control of low entropy quantum states of large scale objects. Here, we pre-cool a 70-MHz micromechanical silica oscillator to an…