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相关论文: Fingerprints of disorder in graphene

200 篇论文

We study theoretically the relative importance of short-range disorder in determining the low-temperature 2D mobility in GaAs-based structures with respect to Coulomb disorder which is known to be the dominant disorder in semiconductor…

介观与纳米尺度物理 · 物理学 2014-04-08 S. Das Sarma , E. H. Hwang

We show that graphene deposited on a substrate has a non-negligible density of atomic scale defects. This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of about 1% with respect to the G peak. We evaluated…

介观与纳米尺度物理 · 物理学 2010-10-15 Z. H. Ni , L. A. Ponomarenko , R. R. Nair , R. Yang , S. Anissimova , I. V. Grigorieva , F. Schedin , Z. X. Shen , E. H. Hill , K. S. Novoselov , A. K. Geim

Graphene is a fascinating material for exploring fundamental science questions as well as a potential building block for novel electronic applications. In order to realize the full potential of this material the fabrication techniques of…

介观与纳米尺度物理 · 物理学 2017-08-23 Xu Du , Ivan Skachko , Eva Y. Andrei

The resistivity of a dense crystalline array of semiconductor nanocrystals (NCs) depends in a sensitive way on the level of doping as well as on the NC size and spacing. The choice of these parameters determines whether electron conduction…

介观与纳米尺度物理 · 物理学 2012-05-23 Brian Skinner , Tianran Chen , B. I. Shklovskii

We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile as well as graphene's transport properties. We discuss the…

介观与纳米尺度物理 · 物理学 2009-05-29 S. Adam , E. H. Hwang , E. Rossi , S. Das Sarma

The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed for mono- and bilayer graphene samples. As a result the edge…

介观与纳米尺度物理 · 物理学 2016-05-12 D. Smirnov , G. Yu. Vasileva , J. C. Rode , C. Belke , Yu. B. Vasilyev , Yu. L. Ivanov , R. J. Haug

We discuss the effect of certain types of static disorder, like that induced by curvature or topological defects, on the quantum correction to the conductivity in graphene. We find that when the intervalley scattering time is long or…

介观与纳米尺度物理 · 物理学 2009-11-11 A. F. Morpurgo , F. Guinea

We investigate charge and energy transport in monolayer graphene with smooth finite-range disorder, modeled by soft impurity potentials. Using a continuum Dirac model, we go beyond the Born approximation by computing the exact scattering…

介观与纳米尺度物理 · 物理学 2026-05-27 Juan A. Cañas , Daniel A. Bonilla , J. C. Pérez-Pedraza , A. Martín-Ruiz

The conductance, the transmission and the reflection probabilities through rectangular potential barriers and pn-junctions are obtained for bilayer graphene taking into account the four bands of the energy spectrum. We have evaluated the…

介观与纳米尺度物理 · 物理学 2013-05-28 B. Van Duppen , F. M. Peeters

We present exact analytical and numerical results for the electronic spectra and the Friedel oscillations around a substitutional impurity atom in a graphene lattice. A chemical dopant in graphene introduces changes in the on-site potential…

Disorder and doping have profound effects on the intrinsic physical mechanisms of superconductivity. In this paper, we employed the determinant quantum Monte Carlo method to investigate the symmetry-allowed superconducting orders on the…

超导电性 · 物理学 2024-08-15 Kaiyi Guo , Yue Zhang , Ying Liang , Tianxing Ma

Transport in undoped graphene is related to percolating current patterns in the networks of {\em N-} and {\em P}-type regions reflecting the strong bipolar charge density fluctuations. Transmissions of the {\em P-N} junctions, though small,…

介观与纳米尺度物理 · 物理学 2009-11-13 V. V. Cheianov , V. I. Falko , B. L. Altshuler , I. L. Aleiner

Graphene with high carrier mobility \mu\ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor…

介观与纳米尺度物理 · 物理学 2012-03-08 A. K. M. Newaz , Yevgeniy S. Puzyrev , Bin Wang , Sokrates T. Pantelides , Kirill I. Bolotin

We report a metal-insulator transition in disordered graphene with low coverages of hydrogen atoms. Hydrogen interacting with graphene creates short-range disorder and localizes states near the neutrality point. The energy range of…

介观与纳米尺度物理 · 物理学 2015-03-13 Junhyeok Bang , K. J. Chang

The dynamical conductivity of interacting multiband electronic systems derived in Ref.[1] is shown to be consistent with the general form of the Ward identity. Using the semiphenomenological form of this conductivity formula, we have…

介观与纳米尺度物理 · 物理学 2015-01-09 I. Kupcic

Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems…

介观与纳米尺度物理 · 物理学 2014-09-09 Stephen R. Power , Antti-Pekka Jauho

Generic properties of elastic phonon transport at a disordered interface are studied. The results show that phonon transmittance is a strong function of frequency and the disorder correlation length. At frequencies lower than the van Hove…

凝聚态物理 · 物理学 2009-10-31 G. Fagas , A. G. Kozorezov , C. J. Lambert , J. K. Wigmore , A. Peacock , A. Poelaert , R. den Hartog

We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage, which reveals the presence of excess charges, even in the absence of intentional doping. Doping…

材料科学 · 物理学 2008-01-07 C. Casiraghi , S. Pisana , K. S. Novoselov , A. K. Geim , A. C. Ferrari

In this paper, the influence of disorder on 1D periodic lattice of resonant scatterers is inspected. These later have multiple resonance frequencies which produce bandgap in the transmission spectrum. One peculiarity of the presented system…

光学 · 物理学 2014-10-09 Olivier Richoux , Agnès Maurel , Vincent Pagneux

We study states arising from fluctuations in the disorder potential in systems with long-range hopping. Here, contrary to systems with short-range hopping, the optimal fluctuations of disorder responsible for the formation of the states in…

无序系统与神经网络 · 物理学 2024-02-21 V. Temkin , A. S. Ioselevich