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相关论文: Fingerprints of disorder in graphene

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Mechanically exfoliated graphene layers deposited on SiO2 substrate were irradiated with Ar+ ions in order to experimentally study the effect of atomic scale defects and disorder on the low-energy electronic structure of graphene. The…

介观与纳米尺度物理 · 物理学 2009-01-21 Levente Tapaszto , Gergely Dobrik , Peter Nemes-Incze , Gabor Vertesy , Philippe Lambin , Laszlo P Biro

Effects of disorder on the electronic transport properties of graphene are strongly affected by the Dirac nature of the charge carriers in graphene. This is particularly pronounced near the Dirac point, where relativistic charge carriers…

介观与纳米尺度物理 · 物理学 2015-06-18 Atikur Rahman , Janice Wynn Guikema , Nina Markovic

The combination of strong disorder and many-body interactions in Anderson insulators lead to a variety of intriguing non-equilibrium transport phenomena. These include slow relaxation and a variety of memory effects characteristic of…

无序系统与神经网络 · 物理学 2009-11-11 V. Orlyanchik , Z. Ovadyahu

We present an extensive study on electrical spectroscopy of graphene ribbons and edges of highly oriented pyrolytic graphite (HOPG) using atomic force microscope (AFM). We have addressed in the present study two main issues, (1) How does…

其他凝聚态物理 · 物理学 2009-11-11 S. Banerjee , M. Sardar , N. Gayathri , A. K. Tyagi , Baldev Raj

A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of…

介观与纳米尺度物理 · 物理学 2019-07-25 I. Shlimak , E. Zion , A. Butenko , Yu. Kaganovskii , V. Richter , A. Sharoni , E. Kogan , M. Kaveh

The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of…

材料科学 · 物理学 2009-11-13 Tian Fang , Aniruddha Konar , Huili Xing , Debdeep Jena

We study the localization properties of the wavefunctions in graphene flakes with short range disorder, via the numerical calculation of the Inverse Participation Ratio($IPR$) and it scaling which provides the fractal dimension $D_{2}$. We…

介观与纳米尺度物理 · 物理学 2014-02-21 Ioannis Kleftogiannis , Ilias Amanatidis

Disorder significantly impacts the electronic properties of conducting quantum materials by inducing electron localization and thus altering the local density of states and electric transport. In insulating quantum magnetic materials, the…

Resonant graphene dopants, such as hydrogen adatoms, experience long-range effective interaction mediated by conduction electrons. As a result of this interaction, when several adatoms are present in the sample, hopping of adatoms between…

介观与纳米尺度物理 · 物理学 2016-03-23 Justin Talbot , Stephan LeBohec , Eugene Mishchenko

We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it…

介观与纳米尺度物理 · 物理学 2015-03-24 Diana A. Cosma , Marcin Mucha-Kruczynski , Henning Schomerus , Vladimir I. Fal'ko

We calculate theoretically the disorder-limited conductivity of monolayer and bilayer graphene on hexagonal boron nitride (h-BN) substrates, comparing our theoretical results with the recent experimental results. The comparison leads to a…

介观与纳米尺度物理 · 物理学 2011-03-17 S. Das Sarma , E. H. Hwang

We study the transport properties of a neutral graphene sheet with curved regions induced or stabilized by topological defects. The proposed model gives rise to Dirac fermions in a random magnetic field and in the random space dependent…

无序系统与神经网络 · 物理学 2013-05-29 Alberto Cortijo , Marí A. H. Vozmediano

We numerically investigate the transport properties of disordered interacting electrons in three dimensions in the metallic as well as in the insulating phases. The disordered many-particle problem is modeled by the quantum Coulomb glass…

介观与纳米尺度物理 · 物理学 2016-04-20 Thomas Vojta , Frank Epperlein

Resonant scattering of electrons with low energies (as compared to the bandwidth) on a single neutral short-range impurity in graphene is analyzed theoretically, taking into account the valley degeneracy. Resonances dramatically increase…

材料科学 · 物理学 2009-11-13 D. M. Basko

Since the experimental realization of graphene1, extensive theoretical work has focused on short-range disorder2-5, ''ripples''6, 7, or charged impurities2, 3, 8-13 to explain the conductivity as a function of carrier density…

其他凝聚态物理 · 物理学 2009-11-13 J. H. Chen , C. Jang , M. S. Fuhrer , E. D. Williams , M. Ishigami

We study diffusive magnetotransport in highly p-doped large area twisted bilayer graphene in 1{\deg}, 7{\deg}, 9{\deg} and 20{\deg} samples. We report weak localization in twisted bilayer graphene for the first time. All samples exhibit…

We investigate the electron transport through a graphene p-n junction under a perpendicular magnetic field. By using Landauar-Buttiker formalism combining with the non-equilibrium Green function method, the conductance is studied for the…

介观与纳米尺度物理 · 物理学 2009-11-13 Wen Long , Qing-feng Sun , Jian Wang

We report the electronic properties of two-dimensional systems made of graphene nanoribbons which are patterned with ad-atoms in two separated regions. Due to the extra electronic confinement induced by the presence of the impurities, we…

介观与纳米尺度物理 · 物理学 2015-09-25 J. W. González , L. Rosales , M. Pacheco , A. Ayuela

We show that a coherent picture of the dc conductivity of monolayer and bilayer graphene at finite electronic densities emerges upon considering that strong short-range potentials are the main source of scattering in these two systems. The…

介观与纳米尺度物理 · 物理学 2011-04-08 A. Ferreira , J. Viana Gomes , Johan Nilsson , Eduardo R. Mucciolo , N. M. R. Peres , A. H. Castro Neto

Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO$_2$ substrate is used to fabricate these devices for efficient gating.…

介观与纳米尺度物理 · 物理学 2022-10-19 Shubhadip Moulick , Rafiqul Alam , Atindra Nath Pal