相关论文: Growth of and optical emission from GaMnAs thin fi…

Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We…

We present a detailed study of the magnetic properties of low-temperature-molecular-beam-epitaxy grown Ge:Mn dilute magnetic semiconductor films. We find strong indications for a frozen state of Ge_{1-x}Mn_{x}, with freezing temperatures of…

We present the results of low temperature (LT) annealing studies of Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy in a wide range of Mn concentrations (0.01<x<0.084). Transport measurements in low and high magnetic…

GeSn epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a judicious explanation for their temperature-dependent photoluminescence (PL) that is…

Morphological, optical and transport properties of GaN and InN nanowires grown by molecular beam epitaxy (MBE) have been studied. The differences between the two materials in respect to growth parameters and optimization procedure was…

Exploring new topological materials with large topological nontrivial bandgaps and simple composition is attractive for both theoretical investigation and experimental realization. Recently alpha tin ({\alpha}-Sn) has been predicted to be…

The phase transition near 40~$^{\circ }$C of both as-grown thin epitaxial MnAs films prepared by molecular beam epitaxy on GaAs(001) and nanometer-scale disks fabricated from the same films is studied. The disks are found to exhibit a…

In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied…

The altermagnetic materials have emerged as model systems for studying spin split electronic structures, yet controlled epitaxial growth on technologically relevant substrates remains challenging. Among the known candidates, MnTe stands out…

We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the…

We report on the superconducting properties of molybdenum nitride thin films grown by reactive DC sputtering at room temperature with a N2:Ar mixture. Thin films grown using 5 % N2 concentration display Tc = 8 K, which is gradually reduced…

We report on an XPS study of AlN thin films grown on Si(100) substrates by ion beam sputter deposition (IBSD) in reactive assistance of N+/N2+ ions to unravel the compositional variation of their surface when deposited at different…

We compare the two-dimensional (2D) plasmon dispersion relations for monolayer graphene when the sample is doped with carriers in the conduction band and the temperature $T$ is zero with the case when the temperature is finite and there is…

Thin films of $\alpha$-MoGe show progressively reduced $T_{c}$'s as the thickness is decreased below 30 nm and the sheet resistance exceeds 100 $\Omega/\Box$. We have performed far-infrared transmission and reflection measurements for a set…

Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined…

Liquid phase epitaxy of an 18 nm thick Yttrium Iron garnet (YIG) film is achieved. Its magnetic properties are investigated in the 100 -- 400 K temperature range, as well as the influence of a 3 nm thick Pt overlayer on them. The saturation…

We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 nm and 20 nm. The changes are dependent on the layer…

The local chemistry, structure, and magnetism of (Ga,Fe)N nanocomposites grown by metal organic vapor phase epitaxy is studied by high resolution synchrotron x-ray diffraction and absorption, transmission electron microscopy, and…

We have performed an $in$-$situ$ depth profile study of Mn-doped GaN prepared by a low temperature thermal diffusion method using photoemission and x-ray absorption spectroscopy. It was revealed from the core-level photoemission…

We measured the terahertz (THz) complex conductivity of Ca doped YBa_{2}Cu_{3}O_{7-\delta} thin films in the frequency range of 0.1 to 3 THz (3 to 100 cm^{-1}) and at a temperature range of 20 to 300 K. The films were measured using both…