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We propose an effective lattice Hamiltonian for monolayer MoS$_2$ in order to describe the low-energy band structure and investigate the effect of perpendicular electric and magnetic fields on its electronic structure. We derive a…

介观与纳米尺度物理 · 物理学 2013-09-04 Habib Rostami , Ali G. Moghaddam , Reza Asgari

The properties of a system of charged particles on a 2D lattice, subject to an anisotropic Jahn-Teller-type interaction and 3D Coulomb repulsion are investigated. In the mean-field approximation without Coulomb interaction, the system…

强关联电子 · 物理学 2008-11-19 T. Mertelj , V. V. Kabanov , D. Mihailovic

Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth…

介观与纳米尺度物理 · 物理学 2025-05-05 Chang Liu , Tongtong Jia , Zheng Sun , Yu Gu , Fan Xu , Kenji Watanabe , Takashi Taniguchi , Jinfeng Jia , Shiyong Wang , Xiaoxue Liu , Tingxin Li

In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like structures. Besides the Schottky barrier height, the transfer…

介观与纳米尺度物理 · 物理学 2019-12-11 Aron Szabo , Achint Jain , Markus Parzefall , Lukas Novotny , Mathieu Luisier

We have fabricated an encapsulated monolayer MoS$_{\mathrm{2}}$ device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility as high as 3000 cm$^{\mathrm{2}}$/Vs at a density of 7…

We describe a photogating effect in mono- and few-layer MoS2, which allows the control of the charge carrier density by almost two orders of magnitude without electrical contacts. Our Raman studies are consistent with physisorbed…

We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the…

介观与纳米尺度物理 · 物理学 2014-03-14 Subhamoy Ghatak , Atindra Nath Pal , Arindam Ghosh

Using the Lanczos exact-diagonalization and density-matrix renormalization group methods, we study the extended Hubbard model at quarter filling defined on the anisotropic triangular lattice. We focus on charge ordering (CO) phenomena…

强关联电子 · 物理学 2009-11-13 S. Nishimoto , M. Shingai , Y. Ohta

We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample…

Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility ({\mu}) in them as compared with corresponding bulk…

We consider configurations of $N$ charged particles on the interval with nearest neighbour Coulomb interaction and constant external force. For different values of external force we find 4 different phases of the asymptotic particle density…

数学物理 · 物理学 2016-11-03 V. A. Malyshev

We review vibrational and electronic properties of single and a few layer MoS$_2$ relevant to understand their resonant and non-resonant Raman scattering results. In particular, the optical modes and low frequency shear and layer breathing…

介观与纳米尺度物理 · 物理学 2015-02-13 Achintya Bera , A. K. Sood

Semiconductor moir\'e heterostructures exhibit rich correlation-induced many-body phenomena with signatures of emergent magnetism, Mott insulating states or generalized Wigner crystals observed in optical spectroscopy by probing intralayer…

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ…

Atomic disorder is a common limiting factor for the low-temperature mobility in monolayer transition-metal dichalcogenides (TMDs; MX2). Here, we study the effect of often occurring atomic vacancies on carrier scattering and transport in p-…

介观与纳米尺度物理 · 物理学 2019-08-27 Kristen Kaasbjerg , Tony Low , Antti-Pekka Jauho

We study antiferromagnetism and single-particle properties in the two-dimensional half-filled Hubbard model at low temperature. Collective spin fluctuations are governed by a non-linear sigma model that we derive from the Hubbard model for…

强关联电子 · 物理学 2007-05-23 K. Borejsza , N. Dupuis

Experiments on quasi-one-dimensional systems such as quantum wires and metallic chains on surfaces suggest the existence of electron-electron interactions of substantial range and hence physics beyond the Hubbard model. We therefore…

强关联电子 · 物理学 2012-05-31 Martin Hohenadler , Stefan Wessel , Maria Daghofer , Fakher F. Assaad

We examine critically two different recently proposed models of charge ordering in the nominally 1/4-filled organic charge transfer solids (CTS). In one dimension, the two models are characterized by site charge densities of the form…

强关联电子 · 物理学 2007-05-23 R. T. Clay , S. Mazumdar , D. K. Campbell

Recent studies of pairing and charge order in materials such as FeSe, SrTiO$_3$, and 2H-NbSe$_2$ have suggested that momentum dependence of the electron-phonon coupling plays an important role in their properties. Initial attempts to study…

强关联电子 · 物理学 2019-05-30 Bo Xiao , F. Hébert , G. Batrouni , R. T. Scalettar

Strong correlation effects, such as a dramatic increase in the effective mass of the carriers of electricity, recently observed in the low density electron gas have provided spectacular support for the existence of a sharp metal-insulator…

强关联电子 · 物理学 2009-11-13 A. Camjayi , K. Haule , V. Dobrosavljevic , G. Kotliar