相关论文: n-Type Chalcogenides by Ion Implantation

The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge-Sb-Te, and Ga- La-S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous…

Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while…

Group-IV monochalcogenides have recently shown great potential for their thermoelectric, ferroelectric, and other intriguing properties. The electrical properties of group-IV monochalcogenides exhibit a strong dependence on the chalcogen…

Tin monosulfide (SnS) is a naturally p-type semiconductor with a layered crystal structure, but no reliable n-type SnS has been obtained by conventional aliovalent ion substitution. In this work, carrier polarity conversion to n-type was…

Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create…

Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically…

The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms…

One of the major roadblocks for the establishment of 2D semiconductor technology for CMOS integrated circuits is lack of industry scalable doping techniques that lead to 2D FETs with comparable n-type and p-type behavior. Here we…

Due to their unique optical and electronic functionalities, chalcogenide glasses are materials of choice for numerous microelectronic and photonic devices. However, to extend the range of compositions and applications, profound knowledge…

Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic point defects. In the ternary CuInSe2, both N-type and P-type conductivity can be obtained depending on the growth conditions and stoichiometry: N-type is obtained when…

Layered chalcogenide materials have a wealth of nanoelectronics applications like resistive switching and energy-harvesting such as photocatalyst owing to rich electronic, orbital, and lattice excitations. In this work, we explore…

Despite many important applications of a-Fe2O3 and Fe doped SnO2 in semiconductors, catalysis, sensors, clinical diagnosis and treatments, one fundamental issue that is crucial to these applications remains theoretically equivocal- the…

Transition metal dichalcogenide (TMDC) monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for…

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrinsic n-type semiconductors due to electron donating which…

This thesis focuses on two different, but complementary, aspects of the modification of gallium lanthanum sulphide (GLS) glasses. Firstly the addition of transition metal ions as dopants is examined and their potential for use as active…

Pnictogen chalcohalides (MChX, M = Bi, Sb; Ch = S, Se; X = I, Br) represent an emerging class of nontoxic photovoltaic absorbers, valued for their favorable synthesis conditions and excellent optoelectronic properties. Despite their…

Semiconductor nanolasers based on micro disks, photonic crystal cavities, and metallo-dielectric nanocavities have been studied during the last decade for on-chip light source applications. However, practical realization of low threshold,…

Superconducting materials exhibit unique physical properties and hold great scientific value and vast industrial application prospects. However, due to limitations such as critical temperature (TC) and critical current density (JC), the…

Group-IV monochalcogenides are emerging as a new class of layered materials beyond graphene, transition metal dichalcogenides (TMDCs), and black phosphorus (BP). In this paper, we report experimental and theoretical investigations of the…

Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional…