相关论文: Resistive switching phenomena in TiOx nanoparticle…
This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled)…
We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical TEM technique using…
In this study, we proposed and demonstrated a self-rectifying property of silicon nitride (Si3N4)-based resistive random access memory device by employing p-type silicon (p-Si) as bottom electrode. The RRAM devices consisted of…
Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO3 (STO) achieved using polar…
A heterojunction-like device consisting of FTO/CeO2/electrolyte/FTO is established with distinct transport performance, where FTO denotes F-doped transparent conducting glass, and the electrolyte is LiI and I2 in acetonitrile. The resistive…
The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive…
Materials exhibiting reversible resistive switching in electrical fields are highly demanded for functional elements in oxide electronics. In particular, multilevel switching effects allow for advanced applications like neuromorphic…
We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction's set switching…
Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the…
Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of…
We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors. Well-developed unipolar switching…
Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered…
Realizing non-volatile control of superconductivity is a key step toward integrating memory and quantum functionality in future information technologies. KTaO_3-based heterostructures uniquely host both interfacial two-dimensional…
Valence change memory (VCM) cells based on SrTiO$_3$ (STO), a perovskite oxide, are a promising type of emerging memory device. While the operational principle of most VCM cells relies on the growth and dissolution of one or multiple…
Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influence their behavior. In this work, we investigate the resistive…
The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with…
In this research, we report the fabrication and characterization of a Ta/HfO2-x/Mo memristor. The synaptic behavior of a Ta/HfO2-x/Mo memristor has been investigated. HfO2-x (15 nm) was grown using the pulsed laser deposition (PLD) method.…
Herein, titania thin films are fabricated by a facile liquid-phase method based on vacuum filtration of a colloidal suspension of titania nanosheets, which is followed by thermal annealing to transform the nanosheet film into anatase TiO2.…
Copper oxide thin film based metal-insulator-metal structures were subjected to white light irradiation.The top electrodes included Al, Cr and Ni while the bottom electrode was either Au or Pt. A white light pulse controls the set process…
Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments…