相关论文: Resistive switching phenomena in TiOx nanoparticle…
Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in…
We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing…
We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance…
The two-dimensional electron gas (2DEG) found in KTaO3-based interfaces has garnered attention due to its remarkable electronic properties. In this study, we investigated the conducting system embedded at the Si3N4/Al//KTO(110)…
Measurements of electrical resistivity ($\rho$), DC magnetization ($M$) and specific heat ($C$) have been performed on layered oxide Li$_x$CoO$_2$ (0.25$\leq$$x$$\leq$0.99) using single crystal specimens. The $\rho$ versus temperature ($T$)…
Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO$_{3}$ (BTO) and few-layers MoSe$_{2}$ are combined in one single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiO$_{x}$/BTO/Au…
The polar interface between LaAlO$_{3}$ and SrTiO$_{3}$ has shown promise as a field effect transistor, with reduced (nanoscale) feature sizes and potentially added functionality over conventional semiconductor systems. However, the…
Molecular devices, as future electronics, seek low-resistivity contacts for the energy saving. At the same time, the contacts should intensify desired properties of tailored electronic elements. In this work, we focus our attention on two…
Resistive switching (RS) devices, based on soft materials such as organic, biomolecules as well as natural plant extracts etc., has emerged as a promising alternative to the conventional memory technologies. They offer simple device…
Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive…
Nonvolatile resistive-switching (RS) memories promise to revolutionize hardware architectures with in-memory computing. Recently, ion-interclation materials have attracted increasing attention as potential RS materials for their…
A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully understood `capacitive', and `inductive' effects. This work…
We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been…
We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide…
Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and…
HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memory technologies. However, as films scale down,…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…
Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…
The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics…