相关论文: Resistive switching phenomena in TiOx nanoparticle…

Metal oxide resistive switches are increasingly important as possible artificial synapses in next generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end,…

This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-x resistive memory devices fabricated with CMOS-compatible processes and materials. The I-V characteristics exhibit a negative differential resistance (NDR) effect due to a…

Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers…

We report on hybrid memristive devices made of a network of gold nanoparticles (10 nm diameter) functionalized by tailored 3,4(ethylenedioxy)thiophene (TEDOT) molecules, deposited between two planar electrodes with nanometer and micrometer…

Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable…

Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and…

Memristive devices made of silicon compatible simple oxides are of great interest for storage and logic devices in future adaptable electronics and non-digital computing applications. A series of highly desirable properties observed in an…

BiFeO3 thin films are deposited on FTO coated glass substrates using a simple sol-gel deposition technique, limiting thickness about 70 nm and Ag/BiFeO3/FTO RRAM devices are prepared. The devices showed low-voltage bipolar switching with…

Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particular, devices are shown to exhibit stable threshold switching…

Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…

The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic, yet computationally efficient, empirical models that can capture all observed…

Stoichiometric SiNx layers (x = [N]/[Si] = 1.33) are doped with Si atoms by ultra-low energy ion implantation (ULE-II) and subsequently annealed at different temperatures in inert ambient conditions. Detailed material and memory cells…

Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two-terminal bridge-like…

Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent…

TiSe2 has received much attention among the transition metals chalcogenides because of its thrilling physical properties concerning atypical resistivity behavior, emerging of charge density wave (CDW) state, induced superconductivity etc.…

This study presents a comprehensive examination of the development of TiN/SiO$_\mathrm{x}$/Cu/SiO$_\mathrm{x}$/TiN memristive devices, engineered for neuromorphic applications using a wedge-type deposition technique and Monte Carlo…

Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…

We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off…

We have studied the physics of transition-edge sensor (TES) devices with an insulating AlOx layer on top of the device to allow implementation of more complex detector geometries. By comparing devices with and without the insulating film,…

Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal…