相关论文: Klein-tunneling transistor with ballistic graphene
The absence of backscattering in metallic nanotubes as well as perfect Klein tunneling in potential barriers in graphene are the prominent electronic characteristics of carbon nanostructures. We show that the phenomena can be explained by a…
We report a theoretical model for a thermal transistor in dielectric four-terminal nanostructures based on mesoscopic ballistic phonon transport, in which a steady thermal flow condition of system is obtained to set up the temperature field…
A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…
We investigate quantum tunneling of charge carriers through a periodic superlattice in twisted bilayer graphene (TBG) with rectangular potential barriers, including the presence of a defect, using a low-energy continuum model. Transmission…
General physical conditions for the occurrence of photonic Klein tunneling are studied, where (controlled) spontaneous emission from the devices considered plays a key role. The specific example of a simple dielectric slab bounded by two…
The tunneling current between two crossed graphene ribbons is described invoking the empirical pseudopotential approximation and the Bardeen transfer Hamiltonian method. Results indicate that the density of states is the most important…
We put forward a concept to create highly collimated, non-dispersive electron beams in pseudo-relativistic Dirac materials such as graphene or topological insulator surfaces. Combining negative refraction and Klein collimation at a…
We theoretically investigate the electron tunneling in dual-gated bilayer graphene-based $n/p$ junctions. It is shown that a band gap is introduced by tuning the gate voltage, which modifies the pseudospin polarization and breaks anti-Klein…
The tunneling of electrons and holes in quantum structures plays a crucial role in studying the transport properties of materials and the related devices. 8-Pmmn borophene is a new two-dimensional Dirac material, which hosts tilted Dirac…
We study the tunneling effect of Dirac fermions in a graphene sheet by introducing a potential barrier in a region of width $D$ exposed to laser field. This sheet is placed on a boron nitride/ferromagnetic substrate such as cobalt or…
Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic…
We study a transmission coefficient of graphene nanoribbons with a top gate which acts as an oblique barrier. Using a Green function method based on the Dirac-like equation, scattering among transverse modes due to the oblique barrier is…
We theoretically investigate the time-dependent ballistic transport in metallic graphene nanoribbons after the sudden switch-on of a bias voltage $V$. The ribbon is divided in three different regions, namely two semi-infinite graphenic…
The tunneling effect of two-dimensional Dirac fermions in a constant magnetic field is studied. This can be done by using the continuity equation at some points to determine the corresponding reflexion and transmission coefficients. For…
The Klein paradox consists in the perfect tunneling of relativistic particles through high potential barriers. As a curious feature of particle physics, it is responsible for the exceptional conductive properties of graphene. It was…
We propose and analize a graphene tunneling transit time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer by the applied gate voltages of different polarity. The depleted i-section…
In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage,…
We show that the feature of Klein tunneling makes graphene a unique interface for implementing low control quantum gates between static and mobile qubits. A ballistic electron spin is considered as the mobile qubit, while the static qubit…
Graphene/silicon heterostructures have attracted tremendous interest as a new platform for diverse electronic and photonic devices such as barristors, solar cells, optical modulators, and chemical sensors. The studies to date largely focus…
We investigate the transport properties of charge carriers in AB bilayer graphene through a triple electrostatic barrier. We calculate the transmission and reflection using the continuity conditions at the interfaces of the triple barrier…