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相关论文: Klein-tunneling transistor with ballistic graphene

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The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel…

介观与纳米尺度物理 · 物理学 2015-05-28 Redwan Sajjad , Avik Ghosh

Klein tunneling is a counterintuitive quantum-mechanical phenomenon, predicting perfect transmission of relativistic particles through higher energy barriers. This phenomenon was shown to be supported at normal incidence in graphene due to…

介观与纳米尺度物理 · 物理学 2022-06-10 Lea Sirota

The relativistic nature of charge carriers in graphene is expected to lead to an angle- dependent transmission through a potential barrier, where Klein tunneling involves annihilation of an electron and a hole at the edges of the barrier.…

介观与纳米尺度物理 · 物理学 2014-01-29 Atikur Rahman , Janice Wynn Guikema , N. M. Hassan , Nina Markovic

Electron transport and quantum conductance through an armchair graphene and its oxidized graphene- containing form were investigated by the density functional theory (DFT) method and the implementation of the non-equilibrium Green function…

介观与纳米尺度物理 · 物理学 2015-01-29 Badie Ghavami , Alireza Rastkar-Ebrahimzadeh

We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n…

应用物理 · 物理学 2017-08-03 Yaohua Tan , Mirza M. Elahi , Han-Yu Tsao , K. M. Masum Habib , N. Scott Barker , Avik W. Ghosh

We have utilized the finite-difference approach to explore electron-tunneling properties in gapped graphene through various electrostatic-potential barriers changing from Gaussian to a triangular envelope function in comparison with a…

介观与纳米尺度物理 · 物理学 2021-10-27 Farhana Anwar , Andrii Iurov , Danhong Huang , Godfrey Gumbs , Ashwani Sharma

We observe conductivity oscillations with aperiodic spacing to only one side of the tunneling current in a dual-gated graphene field effect transistor with an n-p-n type potential barrier. The spacing and width of these oscillatoins were…

介观与纳米尺度物理 · 物理学 2013-07-02 Milan Begliarbekov , Onejae Sul , Nan Ai , Eui-Hyeok Yang , Stefan Strauf

Tunnelling of electrons in graphene-based junctions is studied theoretically. Graphene is assumed to be deposited either directly on a ferromagnetic insulator or on a few atomic layers of boron nitride which separate graphene from a…

介观与纳米尺度物理 · 物理学 2019-05-01 Jędrzej Tepper , Józef Barnaś

The observation of quantum conductance oscillations in mesoscopic systems has traditionally required the confinement of the carriers to a phase space of reduced dimensionality. While electron optics such as lensing and focusing have been…

介观与纳米尺度物理 · 物理学 2009-03-20 Andrea F. Young , Philip Kim

We study quantum tunneling through a potential barrier whose height fluctuates in time and is modeled by Gaussian white noise. We map the stochastic dynamics onto an equivalent time-independent Lindblad equation for the density matrix,…

介观与纳米尺度物理 · 物理学 2026-05-05 Kamal Azaidaoui , Ahmed Jellal , Hocine Bahlouli , A. Al Luhaibi , Michael Vogl

The paper discusses the Klein tunneling and Fabry-P\'erot resonances of charge carriers through a rectangular potential barrier in twisted bilayer graphene. Within the framework of the low-energy excitations, the transmission probability…

介观与纳米尺度物理 · 物理学 2025-02-25 Ayoub Bahlaoui , Youness Zahidi

Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…

介观与纳米尺度物理 · 物理学 2015-06-05 S. Bala Kumar , Gyungseon Seol , Jing Guo

We develop an analytical mode-matching technique for the tight-binding model to describe electron transport across graphene P-N junctions. This method shares the simplicity of the conventional mode-matching technique for the low-energy…

介观与纳米尺度物理 · 物理学 2018-01-29 Shu-Hui Zhang , Wen Yang

Klein tunneling in gapless bilayer graphene, perfect reflection of electrons injecting normal to a pn junction, is expected to disappear in the presence of energy band gap induced by external gates. We theoretically show that the Klein…

介观与纳米尺度物理 · 物理学 2012-06-12 Sunghun Park , H. -S. Sim

Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space…

介观与纳米尺度物理 · 物理学 2015-05-13 Martina Cheli , Gianluca Fiori , Giuseppe Iannaccone

The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions…

介观与纳米尺度物理 · 物理学 2018-05-01 Q. Wilmart , A. Inhofer , M. Boukhicha , W. Yang , M. Rosticher , P. Morfin , N. Garroum , G. Fève , J. -M. Berroir , B. Plaçais

Graphene has proven to host outstanding mesoscopic effects involving massless Dirac quasiparticles travelling ballistically resulting in the current flow exhibiting light-like behaviour. A new branch of 2D electronics inspired by the…

介观与纳米尺度物理 · 物理学 2018-08-22 Gaetano Calogero , Nick R. Papior , Peter Bøggild , Mads Brandbyge

Klein tunneling, the perfect transmission of a normally incident relativistic particle through an energy barrier, has been tested in various electronic, photonic, and phononic systems. Its potential in guiding and filtering classical waves…

Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albeit indirectly. We show that Klein tunneling maybe easier to…

介观与纳米尺度物理 · 物理学 2017-12-06 Yunkun Xie , Yaohua Tan , Avik W. Ghosh

We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the…

介观与纳米尺度物理 · 物理学 2009-11-13 G. Fiori , G. Iannaccone