石墨烯中带间隧穿的建模
介观与纳米尺度物理
2015-10-01 v1
摘要
两条交叉石墨烯带间的隧穿电流通过经验赝势近似和Bardeen转移哈密顿量方法描述。结果表明态密度是决定小(纳米)带间隧穿电流的最重要因素。石墨烯纳米带的准一维性质被显示为导致共振隧穿。
引用
@article{arxiv.1509.09176,
title = {Modeling of inter-ribbon tunneling in graphene},
author = {Maarten L. Van de Put and William G. Vandenberghe and Bart Sorée and Wim Magnus and Massimo Fischetti},
journal= {arXiv preprint arXiv:1509.09176},
year = {2015}
}
备注
IWCE 2015 proceedings. Original title: "Overlaps in Stacked Graphene Flakes Using Empirical Pseudopotentials"