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相关论文: Tuning bulk and surface conduction in topological …

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Ab initio electronic structure calculations based on density functional theory and tight-binding methods for the thermoelectric properties of p-type Sb$_2$Te$_3$ films are presented. The thickness-dependent electrical conductivity and the…

We investigate the roles of disorder on low-temperature transport in SmB$_6$ crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature…

Surfaces of three-dimensional topological insulators have emerged as one of the most remarkable states of condensed quantum matter1-5 where exotic electronic phases of Dirac particles should arise1,6-8. Here we report a discovery of surface…

We present low-temperature transport measurements of a gate-tunable thin film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an…

Starting from the kp method in combination with first-principles calculations, we systematically derive the effective Hamiltonians that capture the low energy band structures of recently discovered topological Kondo insulator SmB6. Using…

材料科学 · 物理学 2015-02-06 Rui Yu , HongMing Weng , Xiao Hu , Zhong Fang , Xi Dai

Possible topological nature of Kondo and mixed valence insulators has been a recent topic of interest in condensed matter physics. Attention has focused on SmB6, which has long been known to exhibit low temperature transport anomaly, whose…

We discuss the evolution of topological states and their orbital textures in the mixed valence compounds SmB6 and YbB6 within the framework of the generalized gradient approximation plus onsite Coulomb interaction (GGA+U) scheme for a wide…

We report that the ionic-liquid gating of bulk single crystals of a topological insulator can control the type of the surface carriers and even results in ambipolar transport. This was made possible by the use of a highly bulk-insulating…

介观与纳米尺度物理 · 物理学 2015-06-04 Kouji Segawa , Zhi Ren , Satoshi Sasaki , Tetsuya Tsuda , Susumu Kuwabata , Yoichi Ando

Heavy fermion materials have recently attracted attention for their potential to combine topological protection with strongly correlated electron physics. To date, the ideas of topological protection have been restricted to the heavy…

强关联电子 · 物理学 2017-08-03 Po-Yao Chang , Onur Erten , Piers Coleman

We have performed first-principles calculation of the surface and bulk wavefunctions of the Cu(111) surface and their hybridization energies to a Co adatom, including the potential scattering from the Co. By analyzing the calculated…

强关联电子 · 物理学 2007-05-23 Chiung-Yuan Lin , A. H. Castro Neto , B. A. Jones

We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages. Temperature dependence of…

介观与纳米尺度物理 · 物理学 2016-10-31 Kyoichi Suzuki , Yuichi Harada , Koji Onomitsu , Koji Muraki

Kondo insulators are strongly correlated system in which a clean insulating gap emerges only at very low temperature due to many-body effects involving localized $f$-electrons. However, certain Kondo insulators, like SmB$_6$ and…

强关联电子 · 物理学 2020-09-16 Sudeshna Sen , N. S. Vidhyadhiraja , Eduardo Miranda , Vladimir Dobrosavljević , Wei Ku

The resistance of a conventional insulator diverges as temperature approaches zero. The peculiar low temperature resistivity saturation in the 4f Kondo insulator (KI) SmB6 has spurred proposals of a correlation-driven topological Kondo…

With a large band gap and a single Dirac cone responsible for the topological surface states, Bi2Se3 is widely regarded as a prototypical 3D topological insulator. Further applications of the bulk material has, however, been hindered by…

材料科学 · 物理学 2023-06-02 Rodrigo T. Paulino , Marcos A. Avila

We study disorder effects on the surface states of the topological insulator Bi$_2$Se$_3$ close to the topologically protected crossing point. Close to charge neutrality, local fluctuations in carrier density arising from the random charged…

介观与纳米尺度物理 · 物理学 2012-06-08 S. Adam , E. H. Hwang , S. Das Sarma

In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)$_{2}$(Te,Se)$_{3}$ (BSTS) has been proposed as a topological insulator with high resistivity and a…

We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi$_2$Te$_3$ following a femtosecond laser excitation. Using time and angle resolved photoelectron spectroscopy, we provide a direct…

We present results of Scanning Tunneling Microscopy and Spectroscopy (STS) measurements on the "Kondo insulator" SmB$_6$. The vast majority of surface areas investigated was reconstructed but, infrequently, also patches of varying size of…

强关联电子 · 物理学 2014-04-04 S. Rößler , Tae-Hwan Jang , D. J. Kim , L. H. Tjeng , Z. Fisk , F. Steglich , S. Wirth

We develop a microscopic theory of the single impurity Kondo effect on a metallic surface. We calculate the hybridization energies for the Anderson Hamiltonian of a magnetic impurity interacting with surface and bulk states and show that,…

材料科学 · 物理学 2009-11-10 Chiung-Yuan Lin , A. H. Castro Neto , B. A. Jones

We report the measurement of spin current induced charge accumulation, the inverse Edelstein effect (IEE), on the surface of a candidate topological Kondo insulator SmB6 single crystal. Robust surface conduction channel of SmB6 has been…