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相关论文: Origin of band gaps in graphene on hexagonal boron…

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We determine the electronic structure of a graphene sheet on top of a lattice-matched hexagonal boron nitride (h-BN) substrate using ab initio density functional calculations. The most stable configuration has one carbon atom on top of a…

The interaction between a graphene layer and a hexagonal Boron Nitride (hBN) substrate induces lateral displacements and strains in the graphene layer. The displacements lead to the appearance of commensurate regions and the existence of an…

介观与纳米尺度物理 · 物理学 2014-09-05 Pablo San-Jose , Ángel Gutiérrez , Mauricio Sturla , Francisco Guinea

In this Letter, we derive an effective theory of graphene on a hexagonal Boron Nitride (h-BN) substrate. We show that the h-BN substrate generically opens a spectral gap in graphene despite the lattice mismatch. The origin of that gap is…

介观与纳米尺度物理 · 物理学 2012-11-12 M. Kindermann , Bruno Uchoa , D. L. Miller

We investigate the adsorption of graphene sheets on h-BN substrates by means of first-principles calculations in the framework of adiabatic connection fluctuation-dissipation theory in the random phase approximation. We obtain adhesion…

介观与纳米尺度物理 · 物理学 2011-12-14 B. Sachs , T. O. Wehling , M. I. Katsnelson , A. I. Lichtenstein

The work presents a study on the quantum theory of periodic graphs applied to mono- and bilayer hexagonal materials. Different parameters associated with the atoms present at the vertices of these materials were analyzed, verifying the…

数学物理 · 物理学 2024-05-28 Osmar N. Souza

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure…

材料科学 · 物理学 2010-11-10 J. Slawinska , I. Zasada , P. Kosinski , Z. Klusek

We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through graphene nanojunctions just before gap formation. Junctions in vacuum and on hBN are formed using classical molecular dynamics to create…

介观与纳米尺度物理 · 物理学 2016-06-29 Hatef Sadeghi , Sara Sangtarash , Colin Lambert

Hexagonal Boron Nitride substrates have been shown to dramatically improve the electric properties of graphene. Recently, it has been observed that when the two honeycomb crystals are close to perfect alignment, strong lattice distortions…

介观与纳米尺度物理 · 物理学 2014-10-08 Pablo San-Jose , Ángel Gutiérrez , Mauricio Sturla , Francisco Guinea

Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction…

介观与纳米尺度物理 · 物理学 2014-05-21 Menno Bokdam , Taher Amlaki , Geert Brocks , Paul J. Kelly

The emerging interest in van der Waals heterostructures as new materials for opto-electronics and photonics poses questions about their stability and structure-property relations. In the framework of density-functional and many-body…

In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…

介观与纳米尺度物理 · 物理学 2024-07-17 Priyanka Sinha , Prasanta K. Panigrahi , Bheemalingam Chittari

Heterostructures of atomically-thin materials have attracted significant interest owing to their ability to host novel electronic properties fundamentally distinct from their constituent layers. In the case of graphene on boron nitride, the…

We use a tight binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in the most stable configuration. We show that an electric field applied in the…

材料科学 · 物理学 2010-11-10 J. Slawinska , I. Zasada , Z. Klusek

The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation…

介观与纳米尺度物理 · 物理学 2014-07-09 Matthew Yankowitz , Jiamin Xue , Brian J. LeRoy

The spatial dependence of the van der Waals (vdW) energy between graphene and hexagonal boron-nitride (h-BN) is investigated using atomistic simulations. The van der Waals energy between graphene and h-BN shows a hexagonal superlattice…

介观与纳米尺度物理 · 物理学 2015-06-19 M. Neek-Amal , F. M. Peeters

By investigating the optoelectronic properties of prototypical graphene/hexagonal boron nitride (h-BN) heterostructures, we demonstrate how a nanostructured combination of these materials can lead to a dramatic enhancement of light-matter…

The role of defects in van der Waals heterostructures made of graphene and hexagonal boron nitride (h-BN) is studied by a combination of ab initio and model calculations. Despite the weak van der Waals interaction between layers, defects…

材料科学 · 物理学 2017-01-04 B. Sachs , T. O. Wehling , M. I. Katsnelson , A. I. Lichtenstein

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturb their various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the…

介观与纳米尺度物理 · 物理学 2013-10-31 Gwanghyun Ahn , Hye Ri Kim , Taeg Yeoung Ko , Kyoungjun Choi , Kenji Watanabe , Takashi Taniguchi , Byung Hee Hong , Sunmin Ryu

Graphene holds great promise for post-silicon electronics, however, it faces two main challenges: opening up a bandgap and finding a suitable substrate material. In principle, graphene on hexagonal boron nitride (hBN) substrate provides…

介观与纳米尺度物理 · 物理学 2011-10-27 Neerav Kharche , Saroj K. Nayak

Interfacial interactions in two parallel-stacked hexagonal boron-nitride (hBN) layers facilitate sliding ferroelectricity, enabling novel device functionalities. Additionally, when Bernal or twisted bilayer graphene is aligned with an hBN…

介观与纳米尺度物理 · 物理学 2026-04-23 Tianyu Zhang , Yueyang Wang , Hongxia Xue , Kenji Watanabe , Takashi Taniguchi , Dong-Keun Ki
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