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Recent experimental findings and theoretical predictions suggest that nitrogen-doped CVD-grown graphene may give rise to electronic band gaps due to impurity distributions which favour segregation on a single sublattice. Here we demonstrate…

介观与纳米尺度物理 · 物理学 2016-02-09 Thomas Aktor , Antti-Pekka Jauho , Stephen R. Power

Magic angle twisted bilayer graphene has emerged as a powerful platform for studying strongly correlated electron physics, owing to its almost dispersionless low-energy bands and the ability to tune the band filling by electrostatic gating.…

介观与纳米尺度物理 · 物理学 2021-07-21 Nikhil Tilak , Xinyuan Lai , Shuang Wu , Zhenyuan Zhang , Mingyu Xu , Raquel de Almeida Ribeiro , Paul C Canfield , Eva Y. Andrei

Graphene is a two-dimensional (2D) semimetal with high mobility in charge carriers due to the existence of Dirac points. Silicene is another promising material, with properties analog to graphene. Many silicon (Si) based electronic devices…

材料科学 · 物理学 2021-09-07 K M Abeywickrama , P K D D P Pitigala , W W P De Silva

We present a detailed study of the electronic and spin-orbit properties of single and bilayer graphene in proximity to the topological insulator Bi$_2$Se$_3$. Our approach is based on first-principles calculations, combined with symmetry…

介观与纳米尺度物理 · 物理学 2019-10-30 Klaus Zollner , Jaroslav Fabian

A specific structure of doped graphene with substituted silicon impurity is introduced and ab. initio density-functional approach is applied for energy band structure calculation of proposed structure. Using the band structure calculation…

介观与纳米尺度物理 · 物理学 2011-03-01 Mohammad S. Sharif Azadeh , Alireza Kokabi , Mehdi Hosseini , Mehdi Fardmanesh

Realization of the quantum-spin-Hall effect in graphene devices has remained an outstanding challenge dating back to the inception of the field of topological insulators. Graphene's exceptionally weak spin-orbit coupling -stemming from…

介观与纳米尺度物理 · 物理学 2019-04-05 K. Hatsuda , H. Mine , T. Nakamura , J. Li , R. Wu , S. Katsumoto , J. Haruyama

Many of the proposed future applications of graphene require the controlled introduction of defects into its perfect lattice. Energetic ions provide one way of achieving this challenging goal. Single heavy ions with kinetic energies in the…

Transport experiments in twisted bilayer graphene revealed multiple superconducting domes separated by correlated insulating states. These properties are generally associated with strongly correlated states in a flat mini-band of the…

Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as quantum spin Hall (QSH) effect, are…

介观与纳米尺度物理 · 物理学 2015-06-17 Liangzhi Kou , Binghai Yan , Feiming Hu , Shu-Chun Wu , Tim O. Wehling , Claudia Felser , Changfeng Chen , Thomas Frauenheim

Diverse emergent correlated electron phenomena have been observed in twisted graphene layers due to electronic interactions with the moir\'e superlattice potential. Many electronic structure predictions have been reported exploring this new…

Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in…

Growth of graphene on monolayer transition-metal dichalcogenides presents opening on band gap and giant spin-orbit coupling which paves the way to achieve a useful hybrid structure for electronics and spintronics applications. Increase of…

介观与纳米尺度物理 · 物理学 2019-01-29 S. F. Ebadzadeh , H. Goudarzi , M. Khezerlou

The electrons in undoped graphene behave as massless Dirac fermions. Therefore graphene can serve as an unique condensed-matter laboratory for the study of various relativistic effects, including quantum electrodynamics (QED) phenomena.…

介观与纳米尺度物理 · 物理学 2011-11-04 O. V. Kibis , O. Kyriienko , I. A. Shelykh

A remarkable feature of the band structure of bilayer graphene at small twist angle is the appearance of isolated bands near neutrality, whose bandwidth can be reduced at certain magic angles (eg. $\theta\sim 1.05^\circ$). In this regime,…

强关联电子 · 物理学 2018-08-30 Liujun Zou , Hoi Chun Po , Ashvin Vishwanath , T. Senthil

In this study, we conduct a first-principles analysis to explore the structural and electronic properties of curved biphenylene/graphene lateral junctions (BPN/G). We start our investigation focusing on the energetic stability of BPN/G by…

The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the…

介观与纳米尺度物理 · 物理学 2007-12-04 Jeroen B. Oostinga , Hubert B. Heersche , Xinglan Liu , Alberto F. Morpurgo , Lieven M. K. Vandersypen

Graphene as a one-atom-thick platform for infrared metamaterial plays an important role in optical science and engineering. Here we study the unique properties of some plasmonic waveguides based on graphene nano-ribbon. It is found that a…

光学 · 物理学 2013-05-29 S. He , X. Zhang , Y. He

In this Letter, we introduce a paradigm to realize magneto-mechanical metastructures inspired by multi-layer 2D materials, such as graphene bilayers. The metastructures are intended to capture two aspects of their nanoscale counterparts.…

材料科学 · 物理学 2021-07-14 Kuan Zhang , Weijian Jiao , Stefano Gonella

We investigate electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -typically a combination of zigzag, armchair, and bearded types - we observe edge state conduction within the band gap, which is…

介观与纳米尺度物理 · 物理学 2025-11-27 Jesús Arturo Sánchez-Sánchez , Thomas Stegmann

We evaluate the electronic transmission and conductance in bilayer graphene through a finite number of potential barriers. Further, we evaluate the dispersion relation in a bilayer graphene superlattice with a periodic potential applied to…

介观与纳米尺度物理 · 物理学 2011-01-21 M. Barbier , P. Vasilopoulos , F. M. Peeters , J. Milton Pereira