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The rich phase diagram of quantum spin-ladder systems has attracted much attention in the theoretical literature. The progress in experimental realisations of this fascinating physics however has been much slower. While materials with a…

介观与纳米尺度物理 · 物理学 2015-11-05 Victoria Mazo , Chia-Wei Huang , Efrat Shimshoni , Sam T. Carr , H. A. Fertig

Twisted graphene multilayers provide tunable platforms to engineer flat bands and exploit the associated strongly correlated physics. The two-dimensional nature of these systems makes them suitable for encapsulation by materials that break…

介观与纳米尺度物理 · 物理学 2022-02-03 Guangze Chen , Maryam Khosravian , Jose L. Lado , Aline Ramires

Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for hightemperature quantum spin Hall (QSH) transport. Here…

Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys…

The band structure and transport properties of massive Dirac Fermions in bilayer graphene with velocity modulation in space are investigated in presence of the previously created band gap. It is pointed out that the velocity engineering is…

介观与纳米尺度物理 · 物理学 2013-11-27 Hosein Cheraghchi , Fatemeh Adinehvand

This study theoretically investigated the magnetic properties and electronic structure of a graphene-based nano-spin-valve-like structure. Magnetic nickel layers on both sides of the graphene were considered. A spin-polarized…

介观与纳米尺度物理 · 物理学 2019-05-30 Yusuf Wicaksono , Shingo Teranishi , Kazutaka Nishiguchi , Koichi Kusakabe

Graphene-based nanostructures exhibit a vast range of exciting electronic properties that are absent in extended graphene. For example, quantum confinement in carbon nanotubes and armchair graphene nanoribbons (AGNRs) leads to the opening…

Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and the regime of operation for devices. The observation of electron-hole asymmetry in graphene and recently in the phase…

The introduction of spin-orbit interactions (SOIs) and the subsequent appearance of a two-dimensional (2D) topological phase are crucial for voltage-controlled and zero-emission energy spintronic devices. In contrast, graphene basically…

介观与纳米尺度物理 · 物理学 2019-04-05 T. Namba , K. Tamura , K. Hatsuda , T. Nakamura , C. Ohata , S. Katsumoto , J. Haruyama

The non-interacting energy spectrum of graphene and its bilayer counterpart consists of multiple degeneracies owing to the inherent spin, valley and layer symmetries. Interactions among charge carriers are expected to spontaneously break…

介观与纳米尺度物理 · 物理学 2015-05-20 R. Thomas Weitz , Monica T. Allen , Benjamin E. Feldman , Jens Martin , Amir Yacoby

The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and…

Electronic band structures in hydrogenated graphene are theoretically investigated by means of first-principle calculations and an effective tight-binding model. It is shown that regularly designed hydrogenation to graphene gives rise to a…

介观与纳米尺度物理 · 物理学 2024-08-05 Yong-Cheng Jiang , Toshikaze Kariyado , Xiao Hu

This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates based on a hybrid graphene/ferromagnet…

Graphene is an ideal material for fabricating atomically thin nanometre spaced electrodes. Recently, carbon-based nanoelectrodes have been employed to create single-molecule transistors and phase change memory devices. In spite of the…

Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the…

Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., $E_G\simeq 500$ meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on…

介观与纳米尺度物理 · 物理学 2016-06-28 Søren Schou Gregersen , Stephen R. Power , Antti-Pekka Jauho

Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different…

It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte…

介观与纳米尺度物理 · 物理学 2015-05-13 Kin Fai Mak , Chun Hung Lui , Jie Shan , Tony F. Heinz

A recipe on how to engineer a band gap in the energy spectrum for the carriers in graphene is conveyed. It is supported by a series of numerical simulations inspired by an analytical result based on the opening of a band gap in periodically…

材料科学 · 物理学 2018-10-05 Stefan Kolev , Victor Atanasov , Hristiyan Aleksandrov , Teodor Milenov

Our understanding of sp2 carbon nanostructures is still emerging and is important for the development of high performance all carbon devices. For example, in terms of the structural behavior of graphene or bi-layer graphene at high bias,…