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We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to…

介观与纳米尺度物理 · 物理学 2015-05-20 Lei Jing , Jairo Velasco , Philip Kratz , Gang Liu , Wenzhong Bao , Marc Bockrath , Chun Ning Lau

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…

There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires two gates to create a band gap and tune channel's conductance…

介观与纳米尺度物理 · 物理学 2013-05-23 Ruge Quhe , Jianhua Ma , Zesheng Zeng , Kechao Tang , Jiaxin Zheng , Yangyang Wang , Zeyuan Ni , Lu Wang , Zhengxiang Gao , Junjie Shi , Jing Lu

We study the low-energy electronic structure of heterostructures formed by one sheet of graphene placed on a monolayer of ${\rm NbSe_2}$. We build a continuous low-energy effective model that takes into account the presence of a twist angle…

介观与纳米尺度物理 · 物理学 2019-06-06 Yohanes S. Gani , Hadar Steinberg , Enrico Rossi

We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 -…

The ability to manufacture tailored graphene nanostructures is a key factor to fully exploit its enormous technological potential. We have investigated nanostructures created in graphene by swift heavy ion induced folding. For our…

We study nxn honeycomb superlattices of defects in graphene. The considered defects are missing p_z orbitals and can be realized by either introducing C atom vacancies or chemically binding simple atomic species at the given sites. Using…

材料科学 · 物理学 2015-05-14 Rocco Martinazzo , Simone Casolo , Gian Franco Tantardini

We study the atomic and electronic structures of the commensurate double moir\'{e} superlattices in fully relaxed twisted bilayer graphene (TBG) nearly aligned with the hexagonal boron nitride (BN). The single-particle effective Hamiltonian…

介观与纳米尺度物理 · 物理学 2020-07-31 Xianqing Lin , Jun Ni

The unconventional properties of graphene, with a massless Dirac band dispersion and large coherence properties, have raised a large interest for applications in nanoelectronics. In this work, we emphasize that graphene two dimensional…

介观与纳米尺度物理 · 物理学 2008-08-27 Pierre Darancet , Valerio Olevano , Didier Mayou

Large-angle twisted bilayer graphene (tBLG) is known to be electronically decoupled due to the spatial separation of the Dirac cones corresponding to individual graphene layers in the reciprocal space. The close spacing between the layers…

介观与纳米尺度物理 · 物理学 2023-02-28 Alina Mrenca-Kolasinska , Peter Rickhaus , Giulia Zheng , Klaus Richter , Thomas Ihn , Klaus Ensslin , Ming-Hao Liu

We propose a new class of materials, which can be viewed as graphene derivatives involving Group IA or Group VIIA elements, forming what we refer to as graphXene. We show that in several cases large band gaps can be found to open up,…

材料科学 · 物理学 2015-05-18 M. Klintenberg , S. Lebegue , M. I. Katsnelson , O. Eriksson

Intrinsic bilayer graphene is a gapless semimetal. Under the application of a bias field it becomes a semiconductor with a direct band gap that is proportional to the applied field. Under a layer-asymmetric strain (where the upper layer…

介观与纳米尺度物理 · 物理学 2014-12-04 J. A. Crosse

Nanoscience offers a unique opportunity to design modern materials from the bottom up, via low-cost, solution processed assembly of nanoscale building blocks. These systems promise electronic band structure engineering using not only the…

介观与纳米尺度物理 · 物理学 2018-08-06 Yingjie Zhang , Youngseok Kim , Matthew J. Gilbert , Nadya Mason

A bipartite lattice with chiral symmetry is known to host zero energy flat bands if the numbers of the two sublattices are different. We demonstrate that this mechanism of producing flat bands can be realized on graphene by introducing…

介观与纳米尺度物理 · 物理学 2022-02-02 Matheus S. M. de Sousa , Fujun Liu , Fanyao Qu , Wei Chen

Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems…

介观与纳米尺度物理 · 物理学 2014-09-09 Stephen R. Power , Antti-Pekka Jauho

Stacking two layers of graphene with a relative twist angle gives rise to moir\'e patterns, which can strongly modify electronic behavior and may lead to unconventional superconductivity. A synthetic version of twisted bilayers can be…

Chirality is one of the key features governing the electronic properties of single- and bilayer graphene: the basics of this concept and its consequences on transport are presented in this review. By breaking the inversion symmetry, a band…

Spontaneous symmetry-breaking, where the ground state of a system has lower symmetry than the underlying Hamiltonian, is ubiquitous in physics. It leads to multiply-degenerate ground states, each with a different "broken" symmetry labeled…

介观与纳米尺度物理 · 物理学 2015-06-15 Jonathan S. Alden , Adam W. Tsen , Pinshane Y. Huang , Robert Hovden , Lola Brown , Jiwoong Park , David A. Muller , Paul L. McEuen

Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the…

The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field effect devices (FED) by…

材料科学 · 物理学 2009-11-13 T. J. Echtermeyer , M. C. Lemme , M. Baus , B. N. Szafranek , A. K. Geim , H. Kurz