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We review the fabrication and transport characterization of hexagonal boron nitride (hBN)/Bernal bilayer graphene (BLG) moir\'e superlattices. Due to the moir\'e effect, the hBN/BLG moir\'e superlattices exhibit an energy gap at the charge…

介观与纳米尺度物理 · 物理学 2025-09-29 Takuya Iwasaki , Yoshifumi Morita

Hexagonal boron nitride (h-BN) is a prominent member in the growing family of two-dimensional materials with potential applications ranging from being an atomically smooth support for other 2D materials to templating growth of molecular…

Intercalation reactions modify the charge density in van der Waals (vdW) materials through coupled electronic-ionic charge accumulation, and are susceptible to modulation by interlayer hybridization in vdW heterostructures. Here, we…

Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and…

介观与纳米尺度物理 · 物理学 2020-06-19 J. Sonntag , J. Li , A. Plaud , A. Loiseau , J. Barjon , J. H. Edgar , C. Stampfer

A novel crystalline structure of hybrid monolayer hexagonal boron nitride (BN) and graphene is predicted by means of the first-principles calculations. This material can be derived via boron or nitrogen atoms substituted by carbon atoms…

介观与纳米尺度物理 · 物理学 2013-10-25 Jinyun Li , Daqiang Gao , Xiaoning Niu , Mingsu Si , Desheng Xue

Hexagonal boron nitride (hBN), having an in-plane hexagonal structure in the sp2 arrangement of atoms, proclaims structural similarity with graphene with only a small lattice mismatch. Despite having nearly identical atomic arrangements and…

材料科学 · 物理学 2023-06-09 Vidyotma Yadav , Tanuja mohanty

Current interest in two-dimensional materials extends from graphene to others systems like single-layer hexagonal boron-nitride (h-BN), for the possibility of making heterogeneous structures to achieve exceptional properties that cannot be…

材料科学 · 物理学 2013-09-04 Jiangtao Wu , Baolin Wang , Yujie Wei , Ronggui Yang , Mildred Dresselhaus

The doping of lighter non-metals like boron and nitrogen into graphene represents a promising advancement in the field of nano-electronic devices, particularly in the development of field-effect transistors (FETs). These doped…

材料科学 · 物理学 2023-08-16 Vivek Kumar Yadav

We perform systematic first-principles calculations of the proximity exchange coupling, induced by cobalt (Co) and nickel (Ni) in graphene, via a few (up to three) layers of hexagonal boron nitride (hBN). We find that the induced spin…

介观与纳米尺度物理 · 物理学 2016-10-26 Klaus Zollner , Martin Gmitra , Tobias Frank , Jaroslav Fabian

Heterostructures made of stacked 2D materials with different electronic properties are studied for their potential in creating multifunctional devices. Graphene (G) and hexagonal boron nitride (h-BN) van der Waals (vdW) systems have been…

材料科学 · 物理学 2023-03-16 D. P. de Andrade Deus , J. M. J. Lopes , Roberto H. Miwa

Graphene exhibits promise as a plasmonic material with high mode confinement that could enable efficient hot carrier extraction. We investigate the lifetimes and mean free paths of energetic carriers in free-standing graphene, graphite and…

材料科学 · 物理学 2016-12-28 Prineha Narang , Litao Zhao , Steven Claybrook , Ravishankar Sundararaman

Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to…

Insight into why superconductivity in pristine and doped monolayer graphene seems strongly suppressed has been central for the recent years' various creative approaches to realize superconductivity in graphene and graphene-like systems. We…

超导电性 · 物理学 2020-06-12 Even Thingstad , Akashdeep Kamra , Justin W. Wells , Asle Sudbø

Heavily doping graphene by intercalation can raise its Fermi level near an extended van Hove singularity, potentially inducing correlated electronic phases. Intercalation also modifies the band structure: dopants may hybridize with carbon…

Hexagonal Boron Nitride substrates have been shown to dramatically improve the electric properties of graphene. Recently, it has been observed that when the two honeycomb crystals are close to perfect alignment, strong lattice distortions…

介观与纳米尺度物理 · 物理学 2014-10-08 Pablo San-Jose , Ángel Gutiérrez , Mauricio Sturla , Francisco Guinea

The study of two-dimensional (2D) electronic systems is of great fundamental significance in physics. Atomic layers containing hybridized domains of graphene and hexagonal boron nitride (h-BNC) constitute a new kind of disordered 2D…

We show that carbon-doped hexagonal boron nitride (h-BN) has extraordinary properties with many possible applications. We demonstrate that the substitution-induced impurity states, associated with carbon atoms, and their interactions…

介观与纳米尺度物理 · 物理学 2015-06-05 Hyoungki Park , Amita Wadehra , John W. Wilkins , Antonio H. Castro Neto

We perform extensive first-principles calculations for heterostructures composed of monolayer graphene and hexagonal boron nitride (hBN). Employing a symmetry-derived minimal tight-binding model, we extract orbital and spin-orbit coupling…

介观与纳米尺度物理 · 物理学 2019-03-29 Klaus Zollner , Martin Gmitra , Jaroslav Fabian

Based on first-principles density-functional theory calculations, we present a comparative study of the elec- tronic structures of ultranarrow zigzag graphene nanoribbons (ZGNRs) embedded in hexagonal boron nitride (BN) sheet and fully…

介观与纳米尺度物理 · 物理学 2015-08-05 Sun-Woo Kim , Hyun-Jung Kim , Jin-Ho Choi , Ralph H. Scheicher , Jun-Hyung Cho

The encapsulation of few-layer transition metal dichalcogenides (TMDs) in hexagonal boron nitride (h-BN) is known to improve significantly their optical and electronic properties. However, it may be expected that the h-BN encapsulation may…

介观与纳米尺度物理 · 物理学 2020-05-06 M. Grzeszczyk , M. R. Molas , M. Bartoš , K. Nogajewski , M. Potemski , A. Babiński