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The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser…

We study the interfacial thermal conductance of grain boundaries (GBs) between monolayer graphene and hexagonal boron nitride (h-BN) sheets using a combined atomistic approach. First, realistic samples containing graphene/h-BN GBs with…

材料科学 · 物理学 2022-01-03 Haikuan Dong , Petri Hirvonen , Zheyong Fan , Ping Qian , Yanjing Su , Tapio Ala-Nissila

We study the effects of an attractive interaction between the boron (B) and the nitrogen (N) atoms doped in a bilayer graphene (BLG), BC$_{14}$N, on the electronic, the thermal and the optical properties for two different types of a doping…

介观与纳米尺度物理 · 物理学 2021-08-03 Nzar Rauf Abdullah , Hunar Omar Rashid , Vidar Gudmundsson

Folded regions are commonly encountered in a number of hexagonal boron nitride (h-BN) based bulk and nanostructured materials. Two types of structural modifications occur in folded h-BN layers: local curvature at the folded edges and…

材料科学 · 物理学 2022-11-21 Anthony Impellizzeri , Michele Amato , Chris P. Ewels , Alberto Zobelli

The recent observed anomalous Hall effect in magic angle twisted bilayer graphene (TBG) aligned to hexagonal boron nitride (hBN) and unconventional ferroelectricity in Bernal bilayer graphene sandwiched by hBN present a new platform to tune…

介观与纳米尺度物理 · 物理学 2024-02-01 Min Long , Zhen Zhan , Pierre A. Pantaleón , Jose Ángel Silva-Guillén , Francisco Guinea , Shengjun Yuan

To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report,…

We investigate theoretically the electronic structure of graphene and boron nitride (BN) lateral heterostructures, which were fabricated in recent experiments. The first-principles density functional calculation demonstrates that a huge…

介观与纳米尺度物理 · 物理学 2016-07-04 Dong Zhang , Maosheng Miao , Fuhua Yang , Haiqing Lin , Kai Chang

We propose a theory of optical absorption in monolayer graphene-hexagonal boron nitride (hBN) heterostructures. In highly oriented heterostructures, the hBN underlay produces a long-range moir\'e superlattice potential for the graphene…

介观与纳米尺度物理 · 物理学 2013-12-10 D. S. L. Abergel , J. R. Wallbank , Xi Chen , M. Mucha-Kruczyński , Vladimir I. Fal'ko

Along with the inherent remarkable properties of graphene, adatom-intercalated graphene-related systems are expected to exhibit tunable electronic properties. The metal-based atoms could provide multi-orbital hybridizations with the…

计算物理 · 物理学 2023-07-26 Thi My Duyen Huynh , Guo-Song Hung , Godfreys Gumbs , Ngoc Thanh Thuy Tran

Monolayer lateral heterostructure of graphene and hexagonal boron nitride (h-BNC) has attracted a growing attention mainly due to its tunable band-gap character and unique physical properties at interface. Hereby, we reported the first-time…

Chemical and structural diversity present in hexagonal boron nitride ((h-BN) and graphene hybrid nanostructures provide new avenues for tuning various properties for their technological applications. In this paper we investigate the…

材料科学 · 物理学 2015-06-11 Alper Kinaci , Justin B. Haskins , Cem Sevik , Tahir Cagin

Bandgap engineering by substituting C with B and N atoms in graphene has been shown to be a promising way to improve semiconducting properties of graphene. Such hybridized monolayers consisting of hexagonal BN phases in graphene (h-BNC)…

材料科学 · 物理学 2015-05-28 Qing Peng , Amir Zamiri , Suvranu De

We calculate theoretically the disorder-limited conductivity of monolayer and bilayer graphene on hexagonal boron nitride (h-BN) substrates, comparing our theoretical results with the recent experimental results. The comparison leads to a…

介观与纳米尺度物理 · 物理学 2011-03-17 S. Das Sarma , E. H. Hwang

We investigate electronic transport in the nitrogen-doped graphene containing different configurations of point defects: singly or doubly substituting N atoms and nitrogen-vacancy complexes. The results are numerically obtained using the…

介观与纳米尺度物理 · 物理学 2014-08-06 T. M. Radchenko , V. A. Tatarenko , I. Yu. Sagalianov , Yu. I. Prylutskyy

The interlayer interaction in graphene/boron-nitride heterostructures is studied using density functional theory calculations with the correction for van der Waals interactions. It is shown that the use of the experimental interlayer…

介观与纳米尺度物理 · 物理学 2017-08-30 Alexander V. Lebedev , Irina V. Lebedeva , Andrey M. Popov , Andrey A. Knizhnik

We report on the fabrication and characterization of dual-gated hexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. Due to the moire effect, the hBN/BLG superlattice harbors an energy gap at the charge neutral point (CNP)…

介观与纳米尺度物理 · 物理学 2024-10-10 Takuya Iwasaki , Yoshifumi Morita

Encapsulating few-layer graphene (FLG) in hexagonal boron nitride (hBN) can cause nanoscale inhomogeneities in the FLG, including changes in stacking domains and topographic defects. Due to the diffraction limit, characterizing these…

In this Letter, we derive an effective theory of graphene on a hexagonal Boron Nitride (h-BN) substrate. We show that the h-BN substrate generically opens a spectral gap in graphene despite the lattice mismatch. The origin of that gap is…

介观与纳米尺度物理 · 物理学 2012-11-12 M. Kindermann , Bruno Uchoa , D. L. Miller

Graphene is one of the most promising 2D materials for various applications due to its unique electronic properties and high thermal stability. In previous studies, it was shown that when graphene is deposited onto some transition metal…

材料科学 · 物理学 2018-02-13 Tianbai Li , Jory A. Yarmoff

Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…

材料科学 · 物理学 2017-02-16 Y. Zhao , Z. Wan , U. Hetmaniuk , M. P. Anantram